SGS Thomson Microelectronics BAS70-07S, BAS70-08S Datasheet
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BAS70-07S / BAS70-08S
®
December 2001 - Ed: 2A
RF DETECTION DIODE
■
LOW DIODE CAPACITANCE
■
LOW SERIES INDUCTANCE AND RESISTANCE
■
SURFACE MOUNT PACKAGE
FEATURES AND BENEFITS
Dual and Triple Schottky diode in SOT323-6L
package. This diode is intented to be used in RF
application for signal detection and temperature
compensation.
DESCRIPTION
SOT323-6L
Symbol Parameter Value Unit
V
R
Continuous reverse voltage 70 V
I
F
Continuous forward current 70 mA
I
FRM
Repetitive peak forward current 70 mA
I
FSM
Surge non repetitive forward current tp= 10 ms sinusoidal 1 A
P Power Dissipation Ta = 55°C 250 mW
T
stg
Storage temperature range - 65 to +150 °C
Tj Maximum junction temperature 150 °C
TL Maximumtemperature for soldering 260 °C
ABSOLUTE RATINGS (limiting values)
1
2
3
6
5
4
BAS70-07S SCHEMATIC DIAGRAM
1
2
3
6
5
4
BAS70-08S SCHEMATIC DIAGRAM
BAS70-07S / BAS70-08S
2/4
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
V
F
Forward voltage drop IF= 1 mA 0.41 V
I
F
= 10 mA 0.75 V
I
F
=15mA 1 V
I
R
Reverse leakage current VR=70V 10 µA
V
BR
Breakdown voltage IR=10µA 70 V
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
C Junction capacitance V
R
=0V F=1MHz 2 pF
R
F
Differential forward
resistance
IF= 10 mA F = 100 MHz 30 Ohm
L
s
Series inductance 1.5 nH
ELECTRICAL CHARACTERISTICS
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient on printed circuit board FR4
with recommended pad layout
500 °C/W
THERMAL RESISTANCE
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