®
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD V O LTAGE DROP
LOW THERMAL RE SISTA NCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
DESCRIPTION
Low turn-on and high breakdown voltage diodes
intended for
ultrafast switching and UHF detectors in hybrid micro circuits. Packaged in SOT-143, this device is
intended for surface mounting. Its dual independent diodes configuration makes it very interesting for applications where high integration is
searched.
A1
A2
K2
K1
SOT-143
BAS70-07
A1
K1
A2
K2
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
RRM
I
FSM
P
T
stg
Repetitive peak reverse voltage 70 V
Continuous forward current 15 mA
F
Surge non repetitive forward current tp = 10ms 1 A
Power Dissipation (note 1) T
tot
= 25°C 310 mW
amb
Storage temperature range - 65 to +150
Tj Maximum operating junction temperature * 150
TL Maximum temperature for soldering during 10s 260
Note 1:
Ptot is the total dissipation of both diodes.
* :
dPtot
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
(*) Mounted on epoxy board with recommended pad layout.
Junction to ambient (*) 400
°
C/W
°
C
°
C
°
C
June 1999 - Ed: 2A
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BAS70-07
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* F orward voltage drop Tj = 25°CI
V
F
V
BR
** Reverse leakage current Tj = 25°CV
I
R
Pulse test: * tp = 380 µs, δ < 2%
DYNAMIC CHARACTERISTICS
Breakdown voltage Tj = 25°CI
** tp = 5 ms, δ < 2%
(Tj = 25 °C)
= 1 mA 410 mV
F
= 10 mA 750 mV
I
F
= 15 mA 1 V
I
F
= 10 µA70 V
R
= 50 V 200 nA
R
= 70 V 10
V
R
Symbol Parameters Tests Conditions Min. Typ. Max. Unit
C Junction capacitance V
t
rr
τ
Revers e recovery time IF = 10 mA Irr = 1 mA
Effective carrier lifetime I
= 1 V F = 1 MHz 2 pF
R
5ns
I
= 10 mA RL = 100
R
= 5 mA Krakauer method 100 ps
F
Ω
µ
A
Fig.1 :
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.18
0.16
0.14
δ = 0.05
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0 1020304050607080
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δ = 0.1
δ = 0.2
IF(av) (mA)
δ = 0.5
δ
δ = 1
T
=tp/T
Fig.2 :
Continuous forward current versus ambient
temperature.
IF(mA)
80
70
60
50
40
30
20
tp
10
0
0 25 50 75 100 125 150
Tamb(°C)
BAS70-07
Fig.3 :
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
0.30
0.25
Ta=25°C
Ta=50°C
0.20
0.15
0.10
I
0.05
0.00
Fig.5 :
M
t
δ
=0.5
1E-3 1E-2 1E-1 1E+0
Reverse leakage current versus reverse
Ta=100°C
t(s)
voltage applied (typical values).
IR(µA)
1E+1
1E+0
Tj=100°C
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
0.10
δ = 0.1
T
Single pulse
tp(s)
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
Fig.6 :
Reverse leakage current versus junction
δ
=tp/T
tp
temperatur e (typical values).
IR(µA)
1E+2
1E+1
VR=70V
1E-1
Tj=25°C
1E-2
VR(V)
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Fig.7 :
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
2.0
1.0
VR(V)
0.1
1 10 100
F=1MHz
Tj=25°C
1E+0
1E-1
1E-2
0 25 50 75 100 125
Fig.8 :
Forward voltage drop versus forward
Tj(°C)
current.
IFM(A)
7E-2
1E-2
1E-3
1E-4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=100°C
Typical values
Maximum values
Tj=25°C
Typical values
Tj=25°C
VFM(V)
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BAS70-07
PACKAGE ME CHANICAL D AT A
SOT-143
D
e1
H
e2
b1
A1
FOOTPRINT DIMENSIONS (millimeters)
E
b
A
DIMENSIONS
REF.
C
Millimeters Inches
Min. Max. Min. Max.
A 0.8 1.2 0.0314 0.0472
L
A1 0.01 0.127 0.0004 0.005
b 0.35 0.6 0.014 0.024
b1 0.55 0.95 0.022 0.037
C 0.085 0.2 0.003 0.008
D 2.8 3.04 0.11 0.12
E 1.2 1.4 0.047 0.055
e1 1.90 Typ. 0.075 Typ.
e2 0.2 Typ. 0.008 Typ.
H 2.1 2.64 0.083 0.103
L 0.55 Typ. 0.022 Typ.
1.92
0.95
0.2
1.1
2.25
0.65
MARKING
Type Marking Package Weight Base qty Delivery mode
BAS70-07 D99 S OT-143 0.01g. 3000 Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or oth erwise under any patent or patent rights of STMi croelectronics . Specifications mentioned i n this publication are subjec t to
change without notice. This publication supersedes and replaces all information previously supplied.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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