SGS Thomson Microelectronics BAS70-07 Datasheet
®
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD V O LTAGE DROP
LOW THERMAL RE SISTA NCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
DESCRIPTION
Low turn-on and high breakdown voltage diodes
intended for
ultrafast switching and UHF detectors in hybrid micro circuits. Packaged in SOT-143, this device is
intended for surface mounting. Its dual independent diodes configuration makes it very interesting for applications where high integration is
searched.
A1
A2
K2
K1
SOT-143
BAS70-07
A1
K1
A2
K2
ABSOLUTE RATINGS
(limiting values)
Symbol Parameter Value Unit
V
I
RRM
I
FSM
P
T
stg
Repetitive peak reverse voltage 70 V
Continuous forward current 15 mA
F
Surge non repetitive forward current tp = 10ms 1 A
Power Dissipation (note 1) T
tot
= 25°C 310 mW
amb
Storage temperature range - 65 to +150
Tj Maximum operating junction temperature * 150
TL Maximum temperature for soldering during 10s 260
Note 1:
Ptot is the total dissipation of both diodes.
* :
dPtot
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
(*) Mounted on epoxy board with recommended pad layout.
Junction to ambient (*) 400
°
C/W
°
C
°
C
°
C
June 1999 - Ed: 2A
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BAS70-07
STATIC ELECTRICAL CHARACTE RISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* F orward voltage drop Tj = 25°CI
V
F
V
BR
** Reverse leakage current Tj = 25°CV
I
R
Pulse test: * tp = 380 µs, δ < 2%
DYNAMIC CHARACTERISTICS
Breakdown voltage Tj = 25°CI
** tp = 5 ms, δ < 2%
(Tj = 25 °C)
= 1 mA 410 mV
F
= 10 mA 750 mV
I
F
= 15 mA 1 V
I
F
= 10 µA70 V
R
= 50 V 200 nA
R
= 70 V 10
V
R
Symbol Parameters Tests Conditions Min. Typ. Max. Unit
C Junction capacitance V
t
rr
τ
Revers e recovery time IF = 10 mA Irr = 1 mA
Effective carrier lifetime I
= 1 V F = 1 MHz 2 pF
R
5ns
I
= 10 mA RL = 100
R
= 5 mA Krakauer method 100 ps
F
Ω
µ
A
Fig.1 :
Average forward power dissipation versus
average forward current.
PF(av)(W)
0.18
0.16
0.14
δ = 0.05
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0 1020304050607080
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δ = 0.1
δ = 0.2
IF(av) (mA)
δ = 0.5
δ
δ = 1
T
=tp/T
Fig.2 :
Continuous forward current versus ambient
temperature.
IF(mA)
80
70
60
50
40
30
20
tp
10
0
0 25 50 75 100 125 150
Tamb(°C)
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