SGS Thomson Microelectronics BAS70-05FILM, BAS70-04FILM, BAS70-06FILM, BAR18FILM Datasheet
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®
BAR 18
BAS70-04 06
SMALL SIGNAL SCHOTTKY DIODES
December 2001 - Ed: 3A
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
70 V
I
F
Continuous forward current
70 mA
P
tot
Power dissipation (note 1) Tamb = 25°C
250 mW
T
stg
Maximum storage temperature range
- 65 to +150 °C
Tj
Maximum operating junction temperature *
150
°C
T
L
Maximum temperature for soldering during 10s
260
°C
Note 1: for double diodes, Ptot is the total dissipation of both diodes
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
R
th (j-a)
Junction to ambient (*)
500 °C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
SOT-23
(Plastic)
K
N.C.
A
BAR18
A
K1
K2
BAS70-06
K
A1
A2
BAS70-05
A1
K2
K1
A2
BAS70-04
* :
dPtot
dTj Rth j a
<
−1()
thermal runaway condition for a diode on its own heatsink
Lowturn-onandhighbreakdownvoltagediodesintendedfor ultrafast switching and UHF detectors in
hybrid micro circuits.
DESCRIPTION
BAR 18 / BAS70-04 06
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Symbol Test Conditions Min. Typ. Max. Unit
V
BR
Tj = 25°C IR= 10µA
70 V
VF*
Tj = 25°C IF= 1mA
410 mV
I
R
**
Tj = 25°C VR= 50V
200 nA
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
Tj = 25°C VR= 0V F = 1MHz
2pF
τ*
Tj = 25°C IF= 5mA Krakauer Method
100 ps
DYNAMIC CHARACTERISTICS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0E+0
2.0E-3
4.0E-3
6.0E-3
8.0E-3
1.0E-2
1.2E-2
1.4E-2
1.6E-2
1.8E-2
2.0E-2
VFM(V)
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
Fig. 1-1: Forward voltage drop versus forward
current (low level).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-4
1E-3
1E-2
7E-2
VFM(V)
IFM(A)
Tj=100°C
Typical values
Tj=25°C
Maximum values
Tj=25°C
Typical values
Fig. 1-2: Forward voltage drop versus forward
current (high level).
* Effective carrier life time.
Pulse test: * tp = 380µs, δ < 2%
** tp = 5 ms, δ < 2%
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