SGS Thomson Microelectronics BAR46AFILM Datasheet
BAR46
®
SMALL SIGNAL SCHOTTKY DIODES
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
High voltage Schottky rectifier suited for SLIC protection during the card insertion operation.
BAR46AFILM
K
N.C.
A
BAR46 BAR46A
SOT-23
(Plastic)
A
K1
K2
ABSOLUTE RATINGS(limiting values)
Symbol Parameter Value Unit
V
RRM
I
P
T
stg
Repetitive peak reverse voltage 100 V
Continuous forward current 150 mA
F
Power dissipation (note 1) Tamb = 25°C 230 mW
tot
Maximum storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
T
Note 1 : for double diodes, Ptot is the total dissipation of both diodes.
dPtot
* :
dTj
Maximum temperature for soldering during 10s 260 °C
L
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth(j-a) Junction-ambient * 500 °C/W
* Mounted on epoxy board, with recommended pad layout.
September 2002 - Ed: 3A
1/5
BAR46 /BAR 46AFILM
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
V
BR
V
F
I
R
Pulse test : * tp = 380µs δ < 2%
** tp = 5 ms, δ < 2%
Tj = 25 °C IR = 100 µA 100 V
* Tj = 25 °C IF = 0.1 mA 0.25 V
Tj = 25 °C I
Tj = 25 °C I
= 10 mA 0.45
F
= 250 mA 1
F
** Tj = 25 °C VR = 1.5 V 0.5 µA
Tj = 60 °C 5
Tj = 25 °C V
= 10 V 0.8
R
Tj = 60 °C 7.5
Tj = 25 °C V
= 50 V 2
R
Tj = 60 °C 15
Tj = 25 °C V
= 75 V 5
R
Tj = 60 °C 20
DYNAMIC CHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
C Tj = 25 °C V
Tj = 25 °C V
= 0 V F = 1MHz 10 pF
R
= 1 V 6
R
2/5
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