SGS Thomson Microelectronics BAR46A, BAR46 Datasheet

BAR46



SMALL SIGNAL SCHOTTKY DIODES

FEATURES AND BENEFITS

VERYSMALLCONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
LOWFORWARD VOLTAGEDROP
SURFACEMOUNTDEVICE

DESCRIPTION

HighvoltageSchottkyrectifiersuited for SLICpro­tectionduring the cardinsertion operation.

K

N.C.

A

BAR46 BAR46A

A

SOT-23

(Plastic)

BAR46A

K1

K2

ABSOLUTE RATINGS(limitingvalues)

Symbol Parameter Value Unit

V

RRM

I
P
T

stg

Tj Maximumoperatingjunction temperature* 150

T

Note 1: fordouble diodes, Ptot isthe total dissipationof bothdiodes.

dPtot

*:

dTj

Repetitivepeak reversevoltage 100 V
Continuousforwardcurrent 150 mA

F

Powerdissipation(note1) Tamb= 25°C 230 mW

tot

Maximumstoragetemperature range - 65 to +150 °C

Maximumtemperaturefor solderingduring 10s 260 °C

L

1

<

Rth(j−a

thermal runawayconditionfor a diode on its ownheatsink

)

°

THERMAL RESISTANCE

Symbol Parameter Value Unit

Rth(j-a) Junction-ambient* 500

* Mounted on epoxy board, with recommended pad layout.

°

C/W

C

June 1999 - Ed: 2A

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BAR46 /BAR46A

ELECTRICALCHARACTERISTICS

STATICCHARACTERISTICS

Symbol Test conditions Min. Typ. Max. Unit

V

BR

V

F

I

R

Pulse test : * tp = 380µs δ <2%

Tj=25°CI

* Tj=25°CI

Tj=25°CI
Tj=25°CI

** Tj = 25 °CV

= 100µA 100 V

R

= 0.1 mA 0.25 V

F

= 10 mA 0.45

F

= 250mA 1

F

=1.5 V 0.5 µA

R

Tj=60°C5
Tj=25°CV

=10 V 0.8

R

Tj=60°C 7.5
Tj=25°CV

=50V 2

R

Tj=60°C15
Tj=25°CV

=75V 5

R

Tj=60°C20

**tp = 5 ms, δ <2%

DYNAMICCHARACTERISTICS

Symbol Test conditions Min. Typ. Max. Unit

CTj=25°CV

Tj = 25 °CV

= 0 V F = 1MHz 10 pF

R

=1V 6

R

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