BAR 42
SMALLSIGNAL SCHOTTKY DIODES
DESCRIPTION
General purposemetal to silicon diodes featuring
very low turn-onvoltageand fastswitching.
BAR 43, A, C, S
K
N.C.
A
BAR42/BAR43 BAR43A
K
A1
A2
BAR43C BAR43S
A
A1
K2
A2
K1
K2
K1
SOT-23
(Plastic)
ABSOLUTERATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
FSM
P
T
I
stg
Repetitivepeak reversevoltage 30 V
Continuousforwardcurrent 100 mA
F
Surge non repetitiveforwardcurrent tp=10mssinusoidal 750 mA
Power dissipation (note 1) T
tot
=25°C 250 mW
amb
Maximumstorage temperaturerange - 65to +150
Tj Maximumoperating junction temperature* 150
T
Note 1: for double diodes,Ptot is the total power dissipation of both diodes.
dPtot
*:
Maximumtemperaturefor soldering during 10s 260
L
1
dTj
<
Rth(j−a
thermal runaway conditionfor a diode on itsown heatsink
)
THERMAL RESISTANCE
Symbol Testconditions Value Unit
R
th(j-a)
* Mounted on epoxy boardwith recommended padlayout.
Junction-ambient* 500
°C/W
°
°C
°C
C
June 1999- Ed: 2A
1/4
BAR 42/BAR 43, A, C, S
ELECTRICALCHARACTERISTICS
STATIC CHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
V
BR
V
F
**
I
R
Tj = 25°CI
*
Tj = 25°C
Tj = 25°C
= 100µA
R
BAR 42 IF= 10 mA 0.35 0.4 V
= 50 mA 0.5 0.65
I
F
BAR 43 I
All I
= 2 mA 0.26 0.33
F
= 15 mA 0.45
I
F
= 100 mA 1
F
VR=25V 500 nA
Tj = 100°C 100
Pulse test: * tp = 380µs,δ<2%
** tp= 5ms,δ<2%
DYNAMICCHARACTERISTICS
Symbol TestConditions Min. Typ. Max. Unit
C
trr Tj = 25°CI
η*Tj=25°CR
* Detectionefficiency.
Tj = 25°CV
=1mA RL= 100Ω
I
rr
F = 45Mhz V
=1V F = 1MHz
R
=10mA IR=10mA
F
=50KΩ CL= 300 pF
L
= 2V forBAR 43
i
30 V
7pF
5ns
80 %
A
µ
Fig. 1-1: Forward voltage drop versus forward
current(typicalvalues, low level).
IFM(A)
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Tj=100°C
Tj=25°C
Tj=50°C
VFM(V)
2/4
Fig. 1-2: Forward voltage drop versus forward
current(typicalvalues, high level).
IFM(A)
5E-1
Tj=100°C
1E-1
Tj=50°C
1E-2
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Tj=25°C
VFM(V)