SGS Thomson Microelectronics BAR28 Datasheet
BAR 28
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction di ode featuring high breakdown, low turn-on voltage and ultrafast s witc hing.
Primarly intended f or high level UHF/V HF detection
and pulse application with broad dynamic range.
Matched batches are available on request .
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FSM
T
RRM
I
F
stg
T
T
L
Repetitive Peak Reverse Voltage 70 V
Forward Continuous Current*
Surge non Repetitive Forward Current*
T
t
p
a
≤ 1s
= 25 °C
Storage and Junction Temperature Range - 65 to 200
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
DO 35
(Glass)
15 mA
50 mA
- 65 to 200
230
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400
ELECTRICAL CHARACTERISTICS
STATIC CHARACT ERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
* *
F
I
* *
R
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°CI
amb
= 25°CV
T
amb
= 10µA
R
= 1mA
F
= 15mA
F
= 50V
R
70 V
0.41 V
1
0.2
DYNAMIC CHARACTE RIST ICS
Symbol Test Conditions Min. Typ. Max. Unit
C
τ
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
T
= 25°CV
amb
= 25°CI
T
amb
≤ 300µs δ < 2%.
p
= 0V f = 1MHz
R
= 5mA Krakauer Method
F
November 1994
2pF
100 ps
°C/W
µA
1/3
BAR 28
Figure 1. Forward current versus forward
voltage at l ow level (typ ical val ues) .
Figure 2. Capacitance C versus reverse
applied voltage V
(typical values).
R
Figure 3. Reverse current versus ambient
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typ ical val ues).
2/3
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