The AVS10 kit is an automatic mains selector
(110/220V AC) to be used in SMPS < 300 W. It is
composed of 2 devices :
■
The Controller is optimized for low
consumption and high security triggering of the
triac. When connected to V
, the mode input
SS
activates an additional option. If the main
power drops from 220V to 110V, the triac
control remains locked to the 220V mode and
avoids any high voltage spike when the voltage
is restored to 220V.
When connected to V
, the mode input
DD
desactivates this option.
■
The TRIAC is specially designed for this
application. An optimization between sensitivity
and dynamic parameters of the triac gate highly
reduces the losses of supply resistor and allows
excellent immunity against disturbances.
A1
AVS1ACP08
DIP-8
AVS10CB
TO-220AB
PIN CONNECTION
V
SS
Osc / In
Osc / OutN.C.
DD
1
2
3
4
8
7
6
5V
V
Mode
V
A2
G
M
G
January 2001 - Ed: 3B
1/8
AVS10
BLOCK DIAGRAM
OSC/IN
OSC/OUT
AVS1ACP08
PeakVoltage
Detector
Zero Crossing
Oscillator
Supply
Detector
Reset
Parasitic
Filter
CP
S
CP
MODE
Mains
mode
Controller
Triggering
Time
Controller
AVS10CB
AVS10CBI
Q
Q
ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
SymbolParameter
V
I
V
SS
I/VO
I/IO
Supply voltage-120.5V
I / O voltageVSS-0.50.5V
I / O current-40+40mA
dI / dtCritical rate of rise of on-state current (1)Repetitive
dV/dt *Linear slope up to 0.67 V
T
stg
T
(1) Gate supply : IG= 100mA – di/dt = 1A/µs*For either polarity of electrode A2 voltage with reference to electrode A1
(2) T
= 110°C
j
2/8
Repetitive peak off-state voltage (2)± 600V
RMS on-state current
AVS10CBTC= 80°C8A
(360° conduction angle)
AVS10CBIT
= 70°C
C
Non repetitive surge peak on-state current ( Tjinitial = 25°C )t = 8.3ms
t = 10ms
tI
2
t valuet = 10ms32A2s
F = 50Hz
Non
Repetitive
Gate openTj = 110°C50V/µs
- 40 + 150
0 + 125
Storage Temperature
Junction Temperature Range
j
DRM
85
80
20A/µs
100
A
°C
AVS10
THERMAL RESISTANCE
TRIAC AVS10CB / AVS10CBI
SymbolParameterValueUnit
Rth (j-a)Junction to ambient60°C/W
Rth (j-c) DCJunction to case for DCAVS10CB3.5°C/W
AVS10CBI4.4
Rth (j-c) ACJunction to case for 360° conduction angle (F = 50Hz)AVS10CB2.6°C/W
AVS10CBI3.3
DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS10CB / AVS10CBI
SymbolParameter
V
GD
V
TM
I
DRM
* For either polarity of electrode A2voltage with reference to electrode A
VD=V
RL = 3.3kΩ Pulse duration > 20µsTj= 110°C0.2V
DRM
*ITM= 11Atp= 10msTj= 25°C1.75V
*V
ratedGate openTj= 25°C10µA
DRM
Fig. 1: Maximum RMS power dissipation versus
RMS on-state current (F = 60Hz). (Curves are cut
off by (dI/dt)c limitation)
Value
Unit
Min.Max.
T
= 110°C500
j
1
Fig. 2: Correlation between maximum mean
power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal
resistances heatsink + contact (AVS10CB).
3/8
AVS10
Fig. 3: Correlation between maximum mean
power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal
resistances heatsink + contact (AVS10CBI).
(1) : This value gives a typical noise immunity on the zero-crossing detectionof 110mV x 1018/18 = 6.20V on the main supply
(2) : See following diagram
(3) : Voltage referred to V
(4) : Voltage referred to V
= 9V)
SS
ISS(pin 1)
connected)
F (pin 3)
(C = 100pF)
(pin 8) Vth (3)Peakvoltage of detection high-threshold4.084.254.42V
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