SGS Thomson Microelectronics AVS10-CB Datasheet
AVS10
AUTOMATIC VOLTAGE SWITCH (SMPS < 300W)
CONTROLLER
■ 50/60Hz FULL COMPATIBILITY
■ INTEGRATED VOLTAGE REGULATOR
■ TRIGGERING PULSE TRAIN OF THE TRIAC
■ PARASITIC FILTER
■ LOW POWER CONSUMPTION
TRIAC
■ HIGH EFFICIENCY AND SAFETY SWITCHING
■ UNINSULATED PACKAGE : AVS10CB
■ INSULATED PACKAGE 2500V
(RMS
) : AVS10CBI
■ V
DRM
= ± 600V
■ I
T(RMS)
:8A
March 1995
DESCRIPTION
The AVS10 kit is an automatic mains selector
(110/220V AC) to be used in SMPS < 300 W. It
is composedof 2 devices :
• The Controller is optimized for low consump-
tion and high security triggering of the triac.
When connected to V
SS
, the mode input activates an additional option. If the main power
drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids
any high voltage spike when the voltage is restored to 220V.
When connected to V
DD
, the mode input de-
sactivates this option.
• The TRIAC is specially designed for this application. An optimization between sensitivity and
dynamic parameters of the triac gate highly
reduces the losses of supply resistor and allows excellent immunity against disturbances.
P
DIP8
(Plas tic)
B
TO 220AB
(Plastic)
A1
A2
G
PIN CONNECTION
1/8
ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
(1) Gate supply: IG= 100mA – di/dt = 1A/µs * For either polarity of electrode A2voltage with reference to electrode A
1
(2) Tj = 110°C
Symb o l Parame ter Val ue Uni t
Min. Max.
V
SS
Supplyvoltage -12 0.5 V
VI/V
O
I / Ovoltage VSS-0.5 0.5 V
II/I
O
I / Ocurrent - 40 + 40 mA
T
stg
StorageTemperature -60 + 150 °C
T
oper
Operating Temperature code ”C ” 0 + 70 °C
TRIAC AVS10CB / AVS10CBI Tj= +25°C (unlessotherwise specified)
Symb o l Parame ter Val ue Uni t
V
DRM
Repetitive peak off-state voltage (2) ± 600 V
I
T(RMS)
RMSon-state current
(360°conduction angle)
AVS10CB TC=80°C
8A
AVS10CBI TC=70°C
I
TSM
Non repetitivesurge peak on-state current
(Tjinitial= 25°C)
t = 8.3ms
t = 10ms
85
80
A
I2tI
2
t value t = 10ms 32 A2s
dI/dt Criticalrate of rise of on-state current(1)
Repetitive
F = 50Hz
20
A/µs
Non
Repetitive
100
dv/dt* Linearslope up to 0.67 V
DRM
Gateopen Tj=110°C50V/µs
T
stg
T
j
StorageTemperature
Operating Junction Temperature
-40 + 150
0 + 110
°C
BLOCK DIAGRAM
Q
Q
Reset
CP
S
CP
OSC/IN
OSC/OUT
MODE
Parasitic
Filter
Peak Voltage
Dectector
AVS1ACP08
A1
A2
Triggering
Time
Controller
AVS10CB
or
AVS10CBI
Supply
1
4
8
2
3
Oscillator
Zero Crossing
Detector
5
3
4
2
1
V
V
G
G
DD
7
DD
V
V
V
M
SS
Mains
mode
Controller
MR
AVS10
2/8
* For either polarity of electrode A2voltage with reference to electrode A1.
DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS10CB / AVS10CBI
Symbol Parameter Value Unit
Min. Max.
V
GD
VD=V
DRMRL
= 3.3kΩ Pulse duration> 20µs Tj = 110°C 0.2 V
VTM*ITM= 11A tp= 10ms Tj = 25 °C 1.75 V
I
DRM
*V
DRM
rated Gateopen
Tj = 25 °C10
µA
Tj = 110°C 500
THERMAL RESISTANCES
TRIAC AVS10CB / AVS10CBI
Symbol Parameter Value Unit
Rth(j-a) Junction-to-ambient 60 °C/W
Rth (j-c) DC Junction-to-case for DC
AVS10CB 3.5
°C/W
AVS10CBI 4.4
Rth (j-c) AC Junction-to-case for 360° conduction angle( F= 50Hz)
AVS10CB 2.6
°C/W
AVS10CBI 3.3
AV S10
3/8
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