RF & MICR OWAVE T RANSI STORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIP TION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-050 is supplied in the IMPAC Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is
intended for military and other high reliability applications.
= 50 W MIN. WITH 5.2 dB GAIN
OUT
AM83135-050
S-BAND RADAR APPLICATION S
.310 x .310 2LFL (S064)
hermetically sealed
ORDER C OD E
AM83135-050
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
BRAN DI N G
83135-50
ABSOLUTE MAXI MUM RATI NGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
I
C
V
CC
T
J
T
STG
THERMAL DAT A
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
November 27, 1996
Device Current* 8.0 A
Collector-SupplyVoltage* 48 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-CaseThermal Resistance* 0.40
case
≤ 125°C)
C
= 25°C)
312 W
65 to +200
−
°
C
°
C
°C/W
1/6
AM8 3135-0 50
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Sym bol Test Co n dit ions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CES
h
FE
= 25mA IE= 0mA 55 — — V
= 5mA IC= 0mA 3.5 — — V
= 25mA RBE= 10W 55 — — V
VBE=0V VCE= 42V — — 20 mA
VCE=5V IC= 3A 30 — 300 —
DYNAMIC
Sym bol Tes t Conditions
P
OUT
η
G
Note : Pulse Width = 10µSec
f = 3.1 — 3.5GHz PIN= 15W VCC= 42V 50 — W
f = 3.1 — 3.5GHz P
c
f = 3.1 — 3.5GHz PIN= 15W VCC= 42V 5.2 — — dB
P
Dut y Cycle = 10%
= 15W VCC= 42V 30 — — %
IN
= 25°C)
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/6
TYPI CAL PE RFORMANCE
AM 83135- 050
OUTPUT POWER vs
FREQUENCY
COLLECTOR EFFICIENCY vs
COLLECTOR SUPPLY VOLTAGE
COLLECTOR EFFICIENCY
vs FREQUENCY
OUTPUT POWER vs COLLECTOR
SUPPLY VOLTAGE
3/6
AM8 3135-0 50
IMPEDANCE D ATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
= 15 W
IN
= 42 V
V
CC
* = 50 ohms
Z
O
L = 3.1 GHz
M = 3.3 GHz
H = 3.5 GHz
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
= 15 W
P
IN
= 42 V
V
CC
Z
* = 50 ohms
O
*Normalized
FREQ.
Z
(Ω)Z
IN
16.5 + j 13.5
10.8 + j 5.5
6.7 + j 5.2
(Ω)
CL
7.7 − j 11.8
6.5 − j 7.2
3.8 − j 6.7
4/6
TEST CIRCUIT
AM 83135- 050
All dimensions are in mils.
Substrate material: 25 mil thick Al
C - 0.3 to 1.2 pF Johanson Gigatrim
L - 1 Turn #26 wire .80 I.D.
2O3(Er
= 9.6)
5/6
AM8 3135-0 50
PACKAGE MECH ANICAL DATA
Ref.: Dwg. No. 12-0221
UDCS No. 1011424 rev A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea
Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Taiwan - Thailand - United Kingdom - U.S.A.
6/6
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