SGS Thomson Microelectronics AM83135-050 Datasheet
RF & MICR OWAVE T RANSI STORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIP TION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-050 is supplied in the IMPAC Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is
intended for military and other high reliability applications.
= 50 W MIN. WITH 5.2 dB GAIN
OUT
AM83135-050
S-BAND RADAR APPLICATION S
.310 x .310 2LFL (S064)
hermetically sealed
ORDER C OD E
AM83135-050
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
BRAN DI N G
83135-50
ABSOLUTE MAXI MUM RATI NGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
I
C
V
CC
T
J
T
STG
THERMAL DAT A
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
November 27, 1996
Device Current* 8.0 A
Collector-SupplyVoltage* 48 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-CaseThermal Resistance* 0.40
case
≤ 125°C)
C
= 25°C)
312 W
65 to +200
−
°
C
°
C
°C/W
1/6
AM8 3135-0 50
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Sym bol Test Co n dit ions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CES
h
FE
= 25mA IE= 0mA 55 — — V
= 5mA IC= 0mA 3.5 — — V
= 25mA RBE= 10W 55 — — V
VBE=0V VCE= 42V — — 20 mA
VCE=5V IC= 3A 30 — 300 —
DYNAMIC
Sym bol Tes t Conditions
P
OUT
η
G
Note : Pulse Width = 10µSec
f = 3.1 — 3.5GHz PIN= 15W VCC= 42V 50 — W
f = 3.1 — 3.5GHz P
c
f = 3.1 — 3.5GHz PIN= 15W VCC= 42V 5.2 — — dB
P
Dut y Cycle = 10%
= 15W VCC= 42V 30 — — %
IN
= 25°C)
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/6
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