SGS Thomson Microelectronics AM83135-040 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM83135-040 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This devi ce is c haracter ized at 1 0µsec pul se wi dth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles, and
temperatures, and can withstand a 3:1 output
VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135- 040 is supp lied in the IMP AC™ Hermetic Metal/Ceramic package with internal
Input/Output impedance matching cir cuitry, and is
intended for mili tary and other high reliability applications.
= 40 W MIN. WITH 5.1 dB GAIN
OUT
.310 x .310 2LFL (S064)
ORDER CO DE
AM83135- 040
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM83135-040
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetical ly sealed
BRANDING
AM83135-40
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
September 1992
Power Dissipation* (TC ≤ 50˚C) 167 W
Device Current* 8.0 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 1.2
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
1/3
AM83135-040
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 25mA IE = 0mA 55 — — V
IE = 5mA IC = 0mA 3.5 — — V
IC = 25mA RBE = 10Ω 55 — — V
VBE = 0V VCE = 40V — — 20 mA
VCE = 5V IC = 3A 30 — 300 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf = 3.1 — 3.5GHz PIN = 12.5W VCC = 40V 30 — — %
G
P
Note: Pulse Widt h
f = 3.1 — 3.5GHz PIN = 12.5W VCC = 40V 40 — — W
f = 3.1 — 3.5GHz PIN = 12.5W VCC = 40V 5.1 — — dB
100µS
=
Duty Cycle=10%
Value
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
.318/
.306
2/3
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