SGS Thomson Microelectronics AM83135-015 Datasheet

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 15 W MIN. WITH 5.2 dB GAIN

OUT

AM83135-015

S-BAND RADAR APPLICATIONS

PRELIMINARY DATA

.310 x .310 2LFL (S064)

ORDER CO DE

DESCRIPTION

The AM83135-015 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica­tions.

This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of op­eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out­put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech­niques ensure high reliability and product consis­tency (including phase characteristics).

The AM83135-015 is supplied in the IMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and
is intended for military and other high reliability
applications.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

T

DISS

I

V

T

STG

C
CC

J

Power Dissipation* (TC ≤ 50˚C) 71 W
Device Current* 3.0 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature

case

= 25°C)

AM83131-015

PIN CONNECTION

1. Collector 3. Emitter

2. Base 4. Base

65 to +200

−

BRANDING

83135-15

°

C

°

C

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

July 27, 1994

Junction-Case Thermal Resistance* 2.8

°

C/W

1/3

AM83135-015

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol Test Condi tions

BV

CBOIC

BV

EBOIE

BV

CERIC

I

CES

h

FE

= 10 mA IE = 0 mA 55 — — V
= 2 mA IC = 0 mA 3.5 — — V

= 10 mA RBE = 10 Ω 55 — — V
VBE = 0 V VCE = 40 V — — 8 mA
VCE = 5 V IC = 1 A 30 — 300 —

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

P

Note: Pulse Widt h

f = 3.1 − 3.5 GHz PIN = 4.5 W VCC = 40 V 15 — — W

cf = 3.1 − 3.5 GHz P

f = 3.1 − 3.5 GHz P

G

100µS

=

Duty Cycle=10%

= 15 W VCC = 40 V 30 — — %

OUT

= 15 W VCC = 40 V 5.2 — — dB

OUT

Valu e

Min. Typ. Max.

Value

Min. Typ. Max.

Unit

Unit

2/3