SGS Thomson Microelectronics AM83135-010 Datasheet
RF & MICROWAVE TRAN SIST ORS
S-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
DESC RIPT ION
The AM83135-010 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applications.
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
The AM83135-010 is supplied in the IMPAC
hermetic metal/c eram ic pack age with internal
input/output impedance matching circuitry, and is
intended for military and other high reliability applications.
10 W MIN. WITH 5.0 dB GAIN
=
.310 x .310 2L F L (S064 )
ORDER CODE
AM83135-010
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
AM83135-010
hermetically sealed
BRANDING
83135-10
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
July 27, 1994
Power Dissipation* (TC≤ 50°C) 50 W
Device Current* 2 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 4.0
case
= 25°C)
°
°
°
C/W
C
C
1/4
AM83135-010
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CES
h
FE
= 7mA IE=0mA 55 — — V
= 1mA IC=0 mA 3.5 — — V
= 7mA RBE= 10 Ω 55 — — V
VBE= 0V VCE= 40 V — — 5 mA
VCE= 5V IC=600 mA 30 — — —
DYNAMIC
Symbol Test Conditions
P
OUT
η
P
Note: Pulse Width
f = 3.1 − 3.5 GHz P
cf=3.1 − 3.5 GHz P
f = 3.1 − 3.5 GHz P
G
100µSec
=
Duty Cycle=10%
3.2 W V
=
IN
10 W V
=
OUT
10 W V
=
OUT
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40 V 10 — — W
=
CC
40 V 30 — — %
=
CC
40 V 5.0 — — dB
=
CC
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4
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