RF & MICR OWAVE TRAN SISTOR S
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
5.0 W MIN. WITH 5.2 dB GAIN
=
AM83135-005
S-BAND RADAR APPLI CATI ONS
.400 x .400 2NLFL (S042)
hermeticallysealed
ORDER COD E
AM83135-005
DESCRIP TION
The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for
military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
Device Current* 1.8 A
Collector-Supply Voltage* 34 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
T
V
T
STG
I
C
CC
J
case
= 25°C)
≤ 100°C)
C
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
40 W
65 to +200
−
BRANDING
83135-5
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier oper ation
August 23, 1996
Junction-Case Thermal Resistance* 3.75
°
C/W
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AM8 3135-005
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 4mA IE=0mA
IE= 2mA IC=0mA
IC= 4mA RBE= 10 Ω
VCE= 30 V
VCE= 5V IC=500 mA
DYNAMIC
Symbol Test Co nditions
P
OUT
hc
P
Note : Pulse W idth
f = 3.1 − 3.5 GHz PIN= 1.5 W VCC= 30 V
f = 3.1 − 3.5 GHz P
f = 3.1 − 3.5 GHz P
G
100 µS
=
Dut y C ycle
10%
=
OUT
OUT
=
=
5.0W V
5.0W V
CC
CC
=
=
30 V
30 V
Value
Min. Typ. Max.
Uni t
50 — — V
3.5 — — V
50 — — V
— — 2.0 mA
10———
Value
Min. Typ. Max.
Uni t
5.0 6.0 — W
27 — — %
5.2 6.4 — dB
2/4
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
AM8 3135-005
L
TYPICAL COLLECTOR
LOAD IMPEDANCE
FREQ.
L = 2.7 GHz
ù = 2.9 GHz
M=3.1 GHz
ù = 3.3 GHz
H = 3.5 GHz
TEST CIRCUI T
Z
CL
Z
(Ω)Z
IN
CL
(Ω)
9.0 j 22.0 48.0 + j 11.5
9.0 j 23.0 43.0 + j 9.0
12.5 + j 25.0 30.0 + j 3.0
20.0 + j 25.0 21.5 + 0.0
22.0 + j 22.5
16.0 − j 3.0
Z
IN
H
Z
CL
H
P
= 1.5 W
IN
= 30 V
V
CC
Normalized to 50 ohms
L
All dimensions are in inches.
Substrate Material: .025 tick Al
C1 : 100 pF Chip Capacitor
C2 : 1500 pF RF Feedthru
C3 : 100 mF Electrolytic
(Note: Mounted on its thin side)
203
(Er = 9.6)
L1 : No. 32 Wire, 2 Turns 1/16” I.D.
L2 : PrintedChoke
3/4
AM8 3135-005
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS Doc. No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia -
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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