SGS Thomson Microelectronics AM83135-005 Datasheet
RF & MICR OWAVE TRAN SISTOR S
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
5.0 W MIN. WITH 5.2 dB GAIN
=
AM83135-005
S-BAND RADAR APPLI CATI ONS
.400 x .400 2NLFL (S042)
hermeticallysealed
ORDER COD E
AM83135-005
DESCRIP TION
The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths. duty cycles and temperatures, and can withstand a 5:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM83135-005 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal Input/Output matching circuitry, and is intended for
military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
Device Current* 1.8 A
Collector-Supply Voltage* 34 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
T
V
T
STG
I
C
CC
J
case
= 25°C)
≤ 100°C)
C
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
40 W
65 to +200
−
BRANDING
83135-5
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier oper ation
August 23, 1996
Junction-Case Thermal Resistance* 3.75
°
C/W
1/4
AM8 3135-005
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 4mA IE=0mA
IE= 2mA IC=0mA
IC= 4mA RBE= 10 Ω
VCE= 30 V
VCE= 5V IC=500 mA
DYNAMIC
Symbol Test Co nditions
P
OUT
hc
P
Note : Pulse W idth
f = 3.1 − 3.5 GHz PIN= 1.5 W VCC= 30 V
f = 3.1 − 3.5 GHz P
f = 3.1 − 3.5 GHz P
G
100 µS
=
Dut y C ycle
10%
=
OUT
OUT
=
=
5.0W V
5.0W V
CC
CC
=
=
30 V
30 V
Value
Min. Typ. Max.
Uni t
50 — — V
3.5 — — V
50 — — V
— — 2.0 mA
10———
Value
Min. Typ. Max.
Uni t
5.0 6.0 — W
27 — — %
5.2 6.4 — dB
2/4
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