RF & MICROWAVE TRAN SISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.10:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 1.0 W MIN. WITH 5.2 dB GAIN
OUT
AM83135-001
S-BAND RADAR APPLI CATI ONS
.400 x .400 2NLF L (S042)
hermetically sealed
ORDER C OD E
AM83135-001
BRAN DI N G
83135-1
DESCRIP TION
The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC
Hermetic/Ceramic package with internal Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
Device Current* 0.45 A
Collector-SupplyVoltage* 34 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature −
T
V
T
STG
I
C
CC
J
case
C
=25°C)
≤100°C)
PIN CONNECTIO N
1. Collector 3. Emitter
2. Base 4. Base
11.5 W
65 to +200
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
February 3, 1997
Junction-CaseThermal Resistance* 13.0
°C/W
1/5
AM8 3135-0 01
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO I
BV
EBO I
BV
CER
I
CES
h
FE
= 1mA IE= 0mA
C
= 1mA IC= 0mA
E
IC= 1mA RBE= 10Ω
VBE= 0V VCE= 30V
VCE= 5V IC= 100mA
DYNAMIC
Symbol Test Condi tions
P
OUT
η
G
Note : Pulse Width = 100 µS
f = 3.1 — 3.5GHz PIN= 0.3W VCC= 30V
c
P
Dut y Cycle = 10%
= 3.1 — 3.5GHz P
f
= 0.3W VCC= 30V
IN
f = 3.1 — 3.5GHz PIN= 0.3W VCC= 30V
Value
Min. T yp. Max.
Uni t
45 — — V
3.5 — — V
45 — — V
——1mA
10———
Value
Min. Typ. Max.
Uni t
1.0 1.4 — W
27 35 — %
5.2 6.7 — dB
2/5
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
= 0.3 W
IN
= 30 V
V
CC
= 50 ohms
Z
O
AM8 3135-00 1
Z
IN
H
L
FREQ.
L = 3.1 GHz
M = 3.3GHz
H = 3.5 GHz
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
= 0.3 W
IN
= 30 V
V
CC
Z
= 50 ohms
O
Z
(Ω)Z
IN
46.0 + j 14.5
43.0 + j 10.0
38.0 + j 10.0
(Ω)
CL
12.0 − j 0.0
11.0 − j 6.5
9.0 − j 15.0
L
Z
CL
H
3/5
AM8 3135-0 01
TEST CIRCUIT
All dimensions are in inches.
Substrate material: .025 thick AI
C1 : 1500 pF RF Feedthrough
C2 : 100 MF Electrolytic
C3 : 100 pF Chip
L1 : No. 26 Wire, 4 Turn .062 I.D.
L2 : PrintedRF Choke
2O3
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A
UDCS No. 1011416
AM8 3135-00 1
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
Taiwan - Thailand - United Kingdom - U.S.A.
5/5
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