SGS Thomson Microelectronics AM83135-001 Datasheet
RF & MICROWAVE TRAN SISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.10:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 1.0 W MIN. WITH 5.2 dB GAIN
OUT
AM83135-001
S-BAND RADAR APPLI CATI ONS
.400 x .400 2NLF L (S042)
hermetically sealed
ORDER C OD E
AM83135-001
BRAN DI N G
83135-1
DESCRIP TION
The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed
for S-Band radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques
ensure high reliability and product consistency.
The AM83135-001 is supplied int the AMPAC
Hermetic/Ceramic package with internal Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
Device Current* 0.45 A
Collector-SupplyVoltage* 34 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature −
T
V
T
STG
I
C
CC
J
case
C
=25°C)
≤100°C)
PIN CONNECTIO N
1. Collector 3. Emitter
2. Base 4. Base
11.5 W
65 to +200
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
February 3, 1997
Junction-CaseThermal Resistance* 13.0
°C/W
1/5
AM8 3135-0 01
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO I
BV
EBO I
BV
CER
I
CES
h
FE
= 1mA IE= 0mA
C
= 1mA IC= 0mA
E
IC= 1mA RBE= 10Ω
VBE= 0V VCE= 30V
VCE= 5V IC= 100mA
DYNAMIC
Symbol Test Condi tions
P
OUT
η
G
Note : Pulse Width = 100 µS
f = 3.1 — 3.5GHz PIN= 0.3W VCC= 30V
c
P
Dut y Cycle = 10%
= 3.1 — 3.5GHz P
f
= 0.3W VCC= 30V
IN
f = 3.1 — 3.5GHz PIN= 0.3W VCC= 30V
Value
Min. T yp. Max.
Uni t
45 — — V
3.5 — — V
45 — — V
——1mA
10———
Value
Min. Typ. Max.
Uni t
1.0 1.4 — W
27 35 — %
5.2 6.7 — dB
2/5
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