SGS Thomson Microelectronics AM82731-050 Datasheet
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMIT TER SITE BALLASTED
. RUGGEDIZED VSWR 3:1 @ 1 dB OVER-
DRIVE
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESCRIPT I ON
The AM82731-050 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
The device is capable of operation over a wde
range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with
a +1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM82731-050 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability applications.
50 W MIN. WITH 6 dB GAIN
.400 x . 400 2L FL (S0 36)
ORDER CODE
AM82731-050
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
AM82731-050
hermeticallysealed
BRAN DI NG
82731-50
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
August 1992
Power Dissipation* (TC≤ 50°C) 167 W
Device Current* 8 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 1.2 °C/W
case
= 25°C)
°
C
°
C
1/4
AM82731-050
ELEC TRICAL SPEC I F ICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 25mA IE= 0mA 55 — — V
IE= 5mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 55 — — V
VCE= 40V — — 20 mA
VCE= 5V IC= 3A 30———
DYNAMIC
Symb ol Test Co n dit i o ns
P
OUT
η
cf=2700 — 3100MHz P
G
P
Note: Pulse Widt h
f = 2700 — 3100MHz P
f = 2700 — 3100MHz P
100µS
=
Duty Cycle=10%
12.5W V
IN =
12.5W V
IN =
12.5W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40V 50 56 — W
CC =
40V 30 35 — %
CC =
40V 6.0 6.5 — dB
CC =
Unit
Unit
TYPICAL PERFORMAN CE
COLLECTOR EFFICIENCY vs
COLLECTOR EFFICIENCY vs FREQUENCY
FREQUENCY
50
C
O
L
L
E
C
T
O
R
E
F
F
I
C
I
E
N
C
Y
%
36.4
40
30
20
10
2.7 2.9 3.1
39.5
50 Watts Ouput
@ 100µS 10% Pulse
V
40 Volts
CC
=
FREQUENCYFREQUENCY
38.0
Upper Window
Mean
Lower Window
GAIN vs FREQUENCY
GAIN vs FREQUENCY
8.00
6.93
7.00
G
A
I
6.00
N
d
B
5.00
4.00
2.7 2.9 3.1
7.19
50 Watts Output
@ 100µS 10% Pulse
V
40 Volts
CC
=
FREQUENCYFREQUENCY
6.43
Upper Window
Mean
Lower Window
2/4
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