SGS Thomson Microelectronics AM82731-025 Datasheet

RF & MICROWAVE TRAN SIST ORS

S-BAND RADAR APPLICAT IONS

.LOW PARASITIC, DOUBLE LEVEL MET-

AL DESIGN

. REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

. 3: 1 VSWR @ 1 dB OVERDRIVE

. LOW RF THERMAL RESISTANCE

.INPUT/OUTPUT IMPEDANCE MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

OUT =

DESCRIPT I ON

The AM82731-025 device is a highpower silicon bi­polarNPNtransistor specificallydesignedforS-Band
radar pulsed outputand driver applications.

Thisdeviceiscapable ofoperation overa widerange
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1output VSWR witha +1dBinput
over drive. Low RF thermal resistance, refrac­tory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product con­sistency(including phase characteristics).

The AM82731-025 is supplied in the Hermetic Met­al/Ceramic package with internal Input/Output im­pedancematching circuitry, and is intended for mili­taryand other high reliability applications.

25 W MIN. WITH 6.2 dB GAIN

.400 x .4 00 2LF L (S036)

hermetically sealed

ORDER CODE

AM82731-025

PIN CON NECTION

1. Collector 3. Emitter

2. Base 4. Base

AM82731-025

BRAN DI NG

82731-25

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

Ic Device Current* 4 A

V

CC

T

J

T

STG

THERMA L DA TA

R

TH(j-c)

*Appliesonly to ratedRF amplifier operation

August 1992

Power Dissipation* (TC≤ 50°C) 100 W

Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250 °C
Storage Temperature − 65 to +200 °C

Junction-Case Thermal Resistance* 2.0 °C/W

case

= 25°C)

1/4

AM82731-025

ELEC TRIC AL SPECI F IC A TI ON S (T

case

= 25°C)

STATIC

Symbol Test Condi tions

BV

CBOIC

BV

EBO

BV

CER

I

CES

h

FE

= 15mA IE= 0mA 55 — — V
IE= 2mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 55 — — V
VCE= 0V VBE= 40V — — 10 mA
VCE= 5V IC= 1.5A 30 — — —

DYNAMIC

Symbol Test Condi tions

P

OUT

η

cf=2.7 — 3.1GHz P

G

PB

Note: Pul se Width

f = 2.7 — 3.1GHz P

f = 2.7 — 3.1GHz P

100 µSec

=

Duty Cycle=10%

6.0W V

IN =

6.0W V

IN =

6.0W V

IN =

Value

Min. Typ. Max.

Value

Min. Typ. Max.

40V 25 30 — W

CC =

40V 30 36 — %

CC =

40V 6.2 7.0 — dB

CC =

Unit

Unit

TYPICAL PERFORM AN CE

TYPICA L BRO A D BAN D

PERFORMANCE

2/4