RF & MICROWAVE TRAN SIST ORS
S-BAND RADAR APPLICAT IONS
.LOW PARASITIC, DOUBLE LEVEL MET-
AL DESIGN
. REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 3: 1 VSWR @ 1 dB OVERDRIVE
. LOW RF THERMAL RESISTANCE
.INPUT/OUTPUT IMPEDANCE MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESCRIPT I ON
The AM82731-025 device is a highpower silicon bipolarNPNtransistor specificallydesignedforS-Band
radar pulsed outputand driver applications.
Thisdeviceiscapable ofoperation overa widerange
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1output VSWR witha +1dBinput
over drive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product consistency(including phase characteristics).
The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedancematching circuitry, and is intended for militaryand other high reliability applications.
25 W MIN. WITH 6.2 dB GAIN
.400 x .4 00 2LF L (S036)
hermetically sealed
ORDER CODE
AM82731-025
PIN CON NECTION
1. Collector 3. Emitter
2. Base 4. Base
AM82731-025
BRAN DI NG
82731-25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
Ic Device Current* 4 A
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
August 1992
Power Dissipation* (TC≤ 50°C) 100 W
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250 °C
Storage Temperature − 65 to +200 °C
Junction-Case Thermal Resistance* 2.0 °C/W
case
= 25°C)
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AM82731-025
ELEC TRIC AL SPECI F IC A TI ON S (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
EBO
BV
CER
I
CES
h
FE
= 15mA IE= 0mA 55 — — V
IE= 2mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 55 — — V
VCE= 0V VBE= 40V — — 10 mA
VCE= 5V IC= 1.5A 30 — — —
DYNAMIC
Symbol Test Condi tions
P
OUT
η
cf=2.7 — 3.1GHz P
G
PB
Note: Pul se Width
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
100 µSec
=
Duty Cycle=10%
6.0W V
IN =
6.0W V
IN =
6.0W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40V 25 30 — W
CC =
40V 30 36 — %
CC =
40V 6.2 7.0 — dB
CC =
Unit
Unit
TYPICAL PERFORM AN CE
TYPICA L BRO A D BAN D
PERFORMANCE
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IMPEDA NCE DATA
TYPICAL I N PUT
IMPEDANCES
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCES
AM82731-025
Z
CL
FREQ. ZIN(Ω)Z
CL
L = 2.7 GHz 12.0 + j 3.0 15.0 − j 4.0
• = 2.8 GHz 9.5 + j 2.5 17.0 − j 3.0
M = 2.9 GHz 6.5 + j 0.0 15.5 − j 3.0
• = 3.0 GHz 6.0 −j 1.5 14.5 − j 3.0
H = 3.1 GHz 5.0 −j 3.0 11.0 − j 3.0
TEST CIRCUIT
(Ω)
PIN= 6.0 W
VCC= 40 V
Normalized to 50 ohms
All dimensions are in inches.
Sustrate material: .025 thick Al2O3(Er = 9.6)
C1 : 22 pF Chip Capacitor
C2 : 1500 pF RF Feedthrough
L1 : No. 26 Wire, 2 Turn, 0.08 Inch I.D.
L2 : No. 26 Wire, 2 Turn, 0.08 Inch I.D.
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AM82731-025
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of use of such information nor for any infringementofpatents orother rights of third parties which may results from its use. No
license isgrantedby implication or otherwiseunder any patent orpatentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publication are subject to changewithout notice.Thispublicationsupersedes andreplacesallinformationpreviouslysupplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices or systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
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