SGS Thomson Microelectronics AM82731-025 Datasheet
RF & MICROWAVE TRAN SIST ORS
S-BAND RADAR APPLICAT IONS
.LOW PARASITIC, DOUBLE LEVEL MET-
AL DESIGN
. REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 3: 1 VSWR @ 1 dB OVERDRIVE
. LOW RF THERMAL RESISTANCE
.INPUT/OUTPUT IMPEDANCE MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESCRIPT I ON
The AM82731-025 device is a highpower silicon bipolarNPNtransistor specificallydesignedforS-Band
radar pulsed outputand driver applications.
Thisdeviceiscapable ofoperation overa widerange
of pulse widths, duty cycles, and temperatures and
can withstand a 3:1output VSWR witha +1dBinput
over drive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding
techniques ensure high reliability and product consistency(including phase characteristics).
The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedancematching circuitry, and is intended for militaryand other high reliability applications.
25 W MIN. WITH 6.2 dB GAIN
.400 x .4 00 2LF L (S036)
hermetically sealed
ORDER CODE
AM82731-025
PIN CON NECTION
1. Collector 3. Emitter
2. Base 4. Base
AM82731-025
BRAN DI NG
82731-25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
Ic Device Current* 4 A
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
August 1992
Power Dissipation* (TC≤ 50°C) 100 W
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250 °C
Storage Temperature − 65 to +200 °C
Junction-Case Thermal Resistance* 2.0 °C/W
case
= 25°C)
1/4
AM82731-025
ELEC TRIC AL SPECI F IC A TI ON S (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
EBO
BV
CER
I
CES
h
FE
= 15mA IE= 0mA 55 — — V
IE= 2mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 55 — — V
VCE= 0V VBE= 40V — — 10 mA
VCE= 5V IC= 1.5A 30 — — —
DYNAMIC
Symbol Test Condi tions
P
OUT
η
cf=2.7 — 3.1GHz P
G
PB
Note: Pul se Width
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
100 µSec
=
Duty Cycle=10%
6.0W V
IN =
6.0W V
IN =
6.0W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40V 25 30 — W
CC =
40V 30 36 — %
CC =
40V 6.2 7.0 — dB
CC =
Unit
Unit
TYPICAL PERFORM AN CE
TYPICA L BRO A D BAN D
PERFORMANCE
2/4
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