SGS Thomson Microelectronics AM82731-012 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM82731-012 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operaion over a wide
range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with
a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and automatic
wire bondi ng t echniqu es en sure hi gh rel ia bilit y an d
product consistency (including phase characteristics).
The AM82 731- 012 i s supp li ed in th e Her met ic Metal/Ceramic package with internal Input/Output impedance matching sircuitry, and is intended for
military and other high reliability applications.
= 12 W MIN. WITH 6.0 dB GAIN
OUT
.400 x .400 2LFL (S036)
ORDER CO DE
AM82731-012
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM82731-012
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetical ly sealed
BRANDI NG
82731-12
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
August 1992
Power Dissipation* (TC ≤ 50˚C) 50 W
Device Current* 2.0 A
Collector-Supply Voltage* 46 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 4.0
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
1/3
AM82731-012
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Valu e
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 7mA IE = 0mA 55 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 7mA RBE = 10Ω 55 — — V
VCE = 40V — — 5 m A
VCE = VI
= 600mA 30 — 300 —
C
Min. Typ. Max.
DYNAMIC
Value
Symbol Test Conditi ons
P
OUT
η
cf = 2700 —3100 MHz PIN = 3.0W VCC = 40V 30 — — %
G
P
Note: Pulse Widt h
f = 2700 —3100 MHz PIN = 3.0W VCC = 40V 12 — — W
f = 2700 —3100 MHz PIN = 3.0W VCC = 40V 6.0 — — dB
100µS
=
Duty Cycle=10%
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
2/3
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