RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 10: 1 VSWR CAPABILIT Y
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT IMPEDANCE MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
.BANDW ID T H
3.0 W. MIN. WITH 5.7 dB GAIN
400 MHz
=
.400 x .400 2NL F L (S 042)
hermetically sealed
ORDER CODE
AM 82731-003
AM82731-003
BRAN DING
82731-3
DESCRIPT ION
The AM82731-003 deviceisamediumpower silicon
bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.
Thisdeviceis capable ofoperation overa widerange
of pulse widths, duty cycles,and temperatures and
can withstand a10:1 outputVSWR.Low RFthermal
resistance, refractory/gold metallization, and automaticwire bonding techniques ensure high reliability
and productconsistency.
The AM82731-003 is supplied in the hermetic metal/ceramic packagewithinternal input/output impedance matching circuitry, and is intended for military
and otherhigh reliability applications.
ABSOLU TE M AXI MUM RAT ING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 23 W
Device Current* 0.9 A
Collector-Supply Voltage* 34 V
Junction Temperature (Pulsed RF Operation) 250 °C
Storage Temperature − 65 to +200 °C
case
= 25°C)
PIN CON N ECTION
1. Collector 3. Emitter
2. Base 4. Base
THERMA L DATA
RTH(j-c) Junction-Case Thermal Resistance 6.5 °C/W
*Appliesonly to ratedRF amplifieroperation
August 1992
1/4
AM82731-003
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Co ndi tions
BV
CBOIC
BV
EBO
BV
CER
I
CES
h
FE
= 2mA IE= 0mA 50 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC= 2mA RBE= 10Ω 50 — — V
VCE= 30V — — 2.0 mA
VCE= 5V IC= 200mA 10 — — —
DYNAMIC
Symbol
P
OUT
η
C
G
PB
Note: Pulse Width
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
f = 2.7 — 3.1GHz P
Duty Cycle=10%
=
100µS
Test C ond it io ns
0.8W V
IN =
0.8W V
IN =
0.8W V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
30V 3.0 4.0 — W
CC =
30V 27 37 — %
CC =
30V 5.7 7.0 — dB
CC =
Unit
Uni t
TYPICAL PERFO RM AN CE
PEAK POWER
OUTPUT
(W)
COLLECTOR
EFFICI ENCY
(%)
TYPICAL BROADBAND
PERFOR MANCE
1.0
0.8
0.6
0.6
0.8
1.0
2/4
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