SGS Thomson Microelectronics AM82223-010 Datasheet

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.EMITTER SITE BALLASTED

.

:1 VSWR CAPABILITY AT RATED

∞

CONDITIONS

.LOW THERMAL RESISTANCE

.INPUT/OUTPUT MATCHING

.OVERLAY GEOMETRY

.METAL/CERAMIC HERMETIC PACKAGE

.P

DESCRIPTION

The AM82223-010 is a common base, silicon
NPN bipolar transistor designed for high gain
and efficiency in the 2.2 − 2.3 GHz frequency
range.

Suitable for hi-rel aerospace telemetry applica­tions, the AM82223-010 is provided in the indus­try-standard AMPAC™ metal/ceramic hermetic
package and incorporates internal input and out­put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome­try.

= 9 W MIN. WITH 6.5 dB GAIN

OUT

.400 x . 40 0 2NLFL (S042)

ORDER CO DE

AM82223-010

PIN CONNECTION

AM82223-010

TELEMETRY APPLICATIONS

hermetically sealed

BRANDING

82223-10

AM82223-010 is capable of withstanding ∞:1
load mismatch at any phase angle under full
rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot

August 31, 1994

Junction Temperature at rated RF operating conditions.

Power Dissipation* (TC ≤ 75˚C) 28 W
Device Current* 1.2 A
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature

Junction-Case Thermal Resistance 4.4

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

65 to +200

−

°
°

°

C/W

C
C

1/3

AM82223-010

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Symbol

BV

CBOIC

BV

CERIC

BV

EBOIE

I

CBO

h

FE

= 5 mA IE = 0 mA 45 — — V
= 10 mA RBE = 10 Ω 45 — — V

= 1 mA IC = 0 mA 3.5 — — V
VCB = 24 V — — 1 m A
VCE = 5 V IC = 750 mA 20 — 300 —

Test Condition s Value

Min. Typ. Max.

DYNAMIC

Symbol Test Conditi ons

P

OUT

η

P

f = 2.2 − 2.3 GHz PIN = 2.0 W VCC = 24 V 9.0 — — W

cf = 2.2 − 2.3 GHz PIN = 2.0 W VCC = 24 V 40 — — %

f = 2.2 − 2.3 GHz PIN = 2.0 W VCC = 24 V 6.5 — — dB

G

Value

Min. Typ. Max.

Unit

Unit

2/3