SGS Thomson Microelectronics AM81720-012 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.RUGGIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
The AM81720 -012 is desi gned specif ically for T elecommunications applications.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR
∞
overlay, emitter site ballasted, geometry utilizing
a refractory/gold metallization system.
The unique AMPAC™ devices are housed in Hermetic Metal/Ceramic packages with internal
Input/Output matching structures.
= 12 W MIN. WITH 7.4 dB GAIN
OUT
:1) under full rated conditions. The unit is an
.400 x .400 2LFL (S036)
ORDER CO DE
AM81720-012
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM81720-012
COMMUNICATIONS APPLICATIONS
hermetically sealed
BRANDING
81720-12
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot
September 1992
Junction Temperature at rated RF operating conditions.
Power Dissipation* 31.8 W
Device Current* 1.47 A
Collector-Supply Voltage* 24 V
Junction Temperature 200
Storage Temperature
Junction-Case Thermal Resistance 5.5
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
1/4
AM81720-012
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
I
CBO
EBO
CBO
h
FE
IC = 5mA IE = 0mA 45 — — V
IE = 5mA IC = 0mA 3.0 — — V
VCB = 24V — — 1. 25 mA
VCE = 5V IC = 1A 15 — 150 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 40 — — %
G
P
f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 12 — — W
f = 1.7 — 2.0GHz PIN = 2.2W VCC = 24V 7.4 — — dB
Value
Min. Typ. Max.
Unit
Unit
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER INPUT
2/4
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