SGS Thomson Microelectronics AM81719-040 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
40 W MIN. WITH 7 dB GAIN
=
AM81719-040
T ELEM E TR Y AP PLI CAT ION S
PRELIMI NARY D AT A
.400 X .400 2 LF L (M228 )
hermeticallysealed
ORDER CODE
AM81719-040
PIN CONNECTIO N
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW communications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* 79.5 W
Device Current* 4.8 A
Collector-SupplyVoltage* 30 V
Junction Temperature 200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
− 65 to +200
BRAN DI N G
81719-40
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
July 6, 1995 1/3
Junction-CaseThermal Resistance* 2.2
°
C/W
AM8 1719-0 40
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Conditions
BV
CBO
BV
EBO
BV
CES
I
CBO
h
FE V
IC= 50 mA IE= 0mA
IE= 4mA IC=0mA
IC= 80 mA
VCB= 28 V
= 30 V IC= 2.5 A
CE
DYNAMIC
Symbol Test C onditi ons
P
OUT
η
G
f = 1750 − 1850 MHz P
cf=1750 − 1850 MHz P
f = 1750 − 1850 MHz P
P
8.0 W V
=
IN
= 8.0 W VCC= 28 V
IN
8.0 W V
=
IN
CC
CC
=
=
28 V
28 V
Value
Min. Typ. Max.
Unit
42 — — V
3.5 — — V
45 — — V
—— 8mA
30 — 300 —
Value
Min. Typ. Max.
Unit
40 — — W
43 — — %
6.7 — — dB
TEST CIRCUIT
Ref.: Dwg. No. 101-000698
July 6, 1995 2/3
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