SGS Thomson Microelectronics AM81214-060 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. RUGGEDIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
55 W MIN. WITH 6.6 dB GAIN
=
AM81214-060
.400 x .400 2N L FL (S 042)
hermetically sealed
ORDER CODE
AM81214-060
DESC RIPTIO N
The AM81214-060 device isa highpower transistor
specifically designed for L-Band radar pulsed output and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM81214-060 is supplied in the AMPAC
Hermetic Metal/Ceramic package with internal
Input/Output matching structures.
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 107 W
Device Current* 5.0 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
25°C)
=
PIN CON NE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
81214-60
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
August 1992
Junction-Case Thermal Resistance* 1.4 °C/W
1/6
AM81214-060
ELEC TRICAL SPECIFICATIO N S (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 20mA IE= 0mA 55 — — V
I
2mA I
=
E
IC=40mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
10Ω 55 — — V
=
BE
28V — — 10 mA
=
CE
VCE= 5V IC= 2A 15 — 150 —
DYNAMIC
Symb ol Test Co n diti o ns
P
OUT
η
cf
G
P
Note: Pulse Wi dth
f=1215 — 1400MHz P
1215 — 1400MHz P
=
f = 1215 — 1400MHz P
1000µS
=
Duty Cycle=10%
12W V
=
IN
12W V
=
IN
12W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28V 55 63 — W
=
CC
28V 50 57 — %
=
CC
28V 6.6 7.2 — dB
=
CC
Unit
Uni t
2/6
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