RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMIT TER SITE BALLASTED
. RUGGEDIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 26 W MIN. WITH 7.2 dB GAIN
OUT
AM81214-030
.310 x .3 10 2LF L (S064)
hermeticallysealed
ORDER CODE
AM81214-030
DESCRIPTI ON
The AM81214-030 device isa highpowertransistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied inthe IMPAC Hermetic M etal/ Ceramic package with i nternal
Input/Output matching structures.
ABSOLU TE MAXI MUM R AT ING S (Tcase = 25°C)
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 63 W
Device Current* 2.75 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
PIN CONNE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
BRAN DI NG
81214-30
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RF amplifieroperation
August 1992
Junction-Case Thermal Resistance* 2.4 °C/W
1/6
AM81214-030
ELEC TRICA L SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 10mA IE= 0mA 55 — — V
I
1mA I
=
E
IC=20mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
=
10Ω 55 — — V
BE
28V — — 5 mA
=
CE
VCE= 5V IC= 1A 15 — 150 —
DYNAMIC
Symbol Test Cond itions
P
IN
η
cf
G
P
Note: Pulse Width
f=1215 — 1400MHz P
1215 — 1400MHz P
=
f=1215 — 1400MHz P
1000µS
=
Duty Cycle=10%
5W Peak V
=
IN
5W Peak V
=
IN
5W Peak V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28V 26 36 — W
=
CC
28V 45 49 — %
=
CC
28V 7.2 8.5 — dB
CC =
Unit
Unit
2/6
TYPICAL PERFORMAN CE
AM81214-030
RELATIVE POWER OUTPUT &
COLLECTOR EFFICIENCY vs
COLLECTOR VOLTAGE
TYPI CAL BROADBAND
POWER AMPLIFIER
MAXIMUM THERMAL RESISTANCE
vs PULSE WIDTH
3/6
AM81214-030
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
PIN= 5.0 W
V
28 V
=
CC
Z
50 Ohms
=
O
FREQ. ZIN(Ω)Z
L=1.215 GHz 4.5 + j 12.5 11.0 − j 10.0
M=1.300 GHz 8.5 + j 13.5 10.5 − j 6.5
H=1.400 GHz 9.5 + j 10.0 8.0 − j 5.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
PIN= 5.0 W
V
28 V
=
CC
Z
50 Ohms
=
O
CL
(Ω)
4/6
TEST CIRCUIT
AM81214-030
PACKAGE MECHANICAL DATA
.318/
.306
5/6
AM81214-030
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted by implication or otherwiseunder any patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publicationare subject to changewithout notice.This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin life support devices orsystems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - Hong Kong - Italy - Japan - Korea - Malaysia- Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden- Switzerland - Taiwan -Thailand - UnitedKingdom -U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
6/6
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