SGS Thomson Microelectronics AM81214-030 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMIT TER SITE BALLASTED
. RUGGEDIZED VSWR
∞
:1
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 26 W MIN. WITH 7.2 dB GAIN
OUT
AM81214-030
.310 x .3 10 2LF L (S064)
hermeticallysealed
ORDER CODE
AM81214-030
DESCRIPTI ON
The AM81214-030 device isa highpowertransistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied inthe IMPAC Hermetic M etal/ Ceramic package with i nternal
Input/Output matching structures.
ABSOLU TE MAXI MUM R AT ING S (Tcase = 25°C)
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 63 W
Device Current* 2.75 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
PIN CONNE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
BRAN DI NG
81214-30
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RF amplifieroperation
August 1992
Junction-Case Thermal Resistance* 2.4 °C/W
1/6
AM81214-030
ELEC TRICA L SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 10mA IE= 0mA 55 — — V
I
1mA I
=
E
IC=20mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
=
10Ω 55 — — V
BE
28V — — 5 mA
=
CE
VCE= 5V IC= 1A 15 — 150 —
DYNAMIC
Symbol Test Cond itions
P
IN
η
cf
G
P
Note: Pulse Width
f=1215 — 1400MHz P
1215 — 1400MHz P
=
f=1215 — 1400MHz P
1000µS
=
Duty Cycle=10%
5W Peak V
=
IN
5W Peak V
=
IN
5W Peak V
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28V 26 36 — W
=
CC
28V 45 49 — %
=
CC
28V 7.2 8.5 — dB
CC =
Unit
Unit
2/6
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