SGS Thomson Microelectronics AM81214-015 Datasheet

RF & MICROWAVE TRAN SIST ORS
L-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
DESCRIPTION
The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsedoutput and driverapplications.
Thisdeviceiscapable ofoperation overa widerange of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWRatrated RF conditions. LowRF thermal resistance and com­puterized automaticwire bondingtechniques ensure high reliability and product consistency.
AM81214-015 is supplied in the grounded IMPAC Hermetic Metal/Ceramic package with internal input/output matching structures.
14.5 W MIN. WITH 8.6 dB GAIN
=
.310 x .310 2LF L ( S064)
ORDER CODE
AM 81214-015
PIN CONNE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
AM81214-015
hermetically sealed
BRANDING
81214-15
ABSOLU TE MAXI MUM R AT ING S (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DAT A
R
TH(j-c)
*Appliesonly torated RF amplifier operation
August 1992 1/4
Power Dissipation* (TC≤ 100°C) 37.5 W Device Current* 1.8 A Collector-Supply Voltage* 32 V Junction Temperature (Pulsed RF Operation) 250 Storage Temperature 65 to +200
Junction-Case Thermal Resistance* 4.0 °C/W
case
= 25°C)
°
C
°
C
AM81214-015
ELEC TRICA L SPECIFICATIONS (T
case
= 25°C)
STATIC
Value
Symbol T est Cond itions
BV BV BV
I
CES
h
CBO EBO CER
FE
IC= 15mA IE= 0mA 48 V IE= 1.5mA IC= 0mA 3.5 V IC = 15mA RBE= 10 48 V VCE= 28V VBE= 28V 1.5 mA VCE= 5V IC= 1A 30 300
Min. Typ. Max.
DYNAMIC
Value
Symbol T est Cond itions
P
IN
η
cf=1.2 — 1.4GHz PIN= 2W Peak VCC= 28V 48 58 %
G
P
Note: Pulse Wi dth = 1000 µ S
f = 1.2 — 1.4GHz PIN= 2W Peak VCC= 28V 14.5 17.0 W
f = 1.2 — 1.4GHz PIN= 2W Peak VCC= 28V 8.6 9.3 dB
Duty Cycle = 10%
Min. Typ . Max.
Uni t
Unit
TYPICAL PERFORMAN CE
TYPICAL BROADBAND
PERFORMANCE
2/4
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