SGS Thomson Microelectronics AM81214-006 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATION S
.310 x .310 2LFL (S064)
hermetically sealed
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
=
5.5 W MIN. WITH 10 dB GAIN
DESCRI P TI ON
The AM81214-006 device is a high power Class
C transistor specifically designed for L-Band Radar pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low RF thermal
resistance an d compute rized automatic wire
bonding techniques ensure high reliability and
product consistency.
AM81214-006 is supplied in the grounded IMPAC Hermetic Metal/Ceramic package with internal input/output matching structures.
PIN CONNECTI ON
BRANDI NG
81214-6
ORDER CODE
AM81214-6
ABSOLUTE MAXIM UM RATINGS (T
case
= 25°C)
Symbol Parameter Value Unit
P
DISS
Power Dissipation* (TC≤ 100°C)
16.7 W
I
C
Device Current* 0.82 A
V
CC
Collector-Supply Voltage* 32 V
T
J
Junction Temperature (Pulsed RF Operation) 250
°
C
T
STG
Storage Temperature
− 65 to +200
°
C
R
TH(j-c)
Junction-CaseThermal Resistance* 9.0 °
C/W
*Appliesonly to rated RF amplifieroperation
AM81214-006
1. Collector 3. Emitter
2. Base 4. Base
THERMAL DATA
ELECTRICAL S PEC I FICATIO NS (T
case
= 25°C)
Symbol Test Conditions
Value
Uni t
Min. Typ. Max.
P
OUT f = 1.2 — 1.4 GHz P
IN
= 0.5 W VCC= 28 V
— 5.5 6.2 W
η
cf=1.2 — 1.4 GHz P
IN
= 0.5 W VCC= 28 V
47 52 — %
G
P f = 1.2 — 1.4 GHz P
IN
= 0.5 W VCC= 28 V
10 10.5 — dB
Note: P ulse Width = 1000µS
Duty Cycle = 10%
STATIC
Symbol Test Conditions
Value
Uni t
Min. Typ. Max.
BV
CBO
IC= 1mA IE=0mA
48 — — V
BV
CER
IC= 5mA RBE= 10Ω
48 — — V
BV
EBO
IE= 1mA IC=0mA
3.5 — — V
I
CES
VBE= 0V VCE= 28 V
——500
µA
h
FE
VCE= 5V IC=500 mA
15 — 300 —
DYNAMIC
TYPICAL PERFOR MANCE
TYPICAL BROADBAND
PERFORMANCE
AM8 1214-006
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