RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 85 W MIN. WITH 7.5 dB GAIN
OUT
AM80912-085
AVIONI CS APPLICA TIONS
.400 x . 400 2NLF L (S042)
hermetically sealed
ORDER CODE
AM80912-085
PIN CONNE CTI ON
BRANDING
80912-85
DESC RIPT ION
The AM80912-085 is designed for specialized
avionics applicat i ons including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-085 is housed in a unique BIGPAC Hermetic Metal/Ceramic package with in-
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DAT A
R
TH(j-c)
Power Dissipation* (TC≤ 100°C) 300 W
Device Current* 8.0 A
Collector-Supply Voltage* 40 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 0.75 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
*Appliesonly to rated RFamplifier operation
August 1992
1/5
AM80912-085
ELEC TRICAL SPE CIF ICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 25mA IE= 0mA 55 — — V
I
10mA I
=
E
IC=25mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
10Ω 55 — — V
=
BE
35V — — 20 mA
=
CE
VCE= 5V IC= 2A 20 — 200 —
DYNAMIC
Symb ol Test Condit i o ns
P
OUT
η
cf
G
P
Note: Pulse format: 6.4 µSon6.6µS off, repeat for 3.3 ms, then of f for 4. 5125 ms
f=960 — 1215MHz P
960 — 1215MHz P
=
f=960 — 1215MHz P
Duty Cycle: Bur st 49.2%, overall 20.8%
IN
IN
IN
15W V
=
15W V
=
15W V
=
35V 85——W
=
CC
35V 40 — — %
=
CC
35V 7.5 — — dB
=
CC
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5
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