SGS Thomson Microelectronics AM80912-015 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.
:1 VSWR CAPABILITY
∞
. LOW THERMAL RESISTANCE
.INPUT MATCHING
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 15 W MIN. WITH 8.1 dB GAIN
OUT
.BANDWIDTH 255 MHz
AM80912-015
AVIONI CS APPLICA TIONS
.310 x .3 10 2LF L (S064)
hermetically sealed
ORDER CODE
AM80912-015
PIN CONNE C TIO N
DESCRIPTION
The AM80912-015 is designed for specialized
avionics applicati ons , including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-015 is housed in the unique
IMPAC Hermetic Metal/Ceramic package with
ABSOLU TE MAXI MUM R AT ING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation*(TC≤ 100°C) 50 W
Device Current* 1.8 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRAN DI NG
80912-15
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly torated RFamplifier operation
March 1994
Junction-Case Thermal Resistance* 3.0 °C/W
1/6
AM80912-015
ELEC TRICA L SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 10mA IE= 0mA 55 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 10mA RBE= 10Ω 55 — — V
VBE= 0V VCE= 28V — — 2.0 mA
VCE= 5V IC= 500mA 15 — 150 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=960 — 1215MHz P
G
P
Note: Pulse format: 6.4 µSon6.6µS off, repeat for 3.3 ms, t hen off for 4. 5125 ms.
f = 960 — 1215MHz P
f = 960 — 1215MHz P
Duty Cycle: Burs t 49.2%, overall 20.8%
IN
IN
IN
2.3W V
=
2.3W V
=
2.3W V
=
28V 15 17 — W
=
CC
28V 45 49 — %
=
CC
28V 8.1 8.9 — dB
=
CC
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/6
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