SGS Thomson Microelectronics AM80912-005 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 6.0 W MIN. WITH 9.3 dB GAIN
OUT
AM80912-005
AVIONI CS APPLICA TIONS
.310 x . 310 2L FL (S 064)
hermetically sealed
ORDER CODE
AM80912-005
PIN CO NNE C TIO N
BRAN DI NG
80912-5
DESCRIPT I ON
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM8 0912-005 is housed in the unique
IMPAC Hermetic Metal/Ceramic package with
ABSOLU TE M AXI MUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifier operation
Power Dissipation* (TC≤ 75°C) 25 W
Device Current* 0.9 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 7.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
August 1992
1/4
AM80912-005
ELEC TRICAL SPEC I F ICA TIONS (T
case
= 25°C)
STATIC
Value
Symbol Test Condition s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 1mA IE= 0mA 48 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 48 — — V
VBE= 0V VCE= 28V — — 0.5 mA
VCE= 5V IC= 250mA 30 — 300 —
Min. Typ. Max.
DYNAMIC
Value
Symb ol Test Co n dit i o ns
P
OUT
η
cf=960 — 1215MHz PIN= 0.7W VCC= 28V 45 — — %
G
P
Note: Pulse format: 6.4 µSon6.6µS off, repe at for 3.3 ms, then off f or 4.5125 ms.
f = 960 — 1215MHz PIN= 0.7W VCC= 28V 6.0——W
f = 960 — 1215MHz PIN= 0.7W VCC= 28V 9.3 — — dB
Duty Cycle: Burst 49.2%, overall 20.8%
Min. Typ. Max.
Unit
Unit
2/4
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