SGS Thomson Microelectronics AM80814-025 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
DESCRIPTION
AM80814- 025 is a high pow er si li con Cl ass C t ransistor designed for ultra-broadband L-Band radar
applications.
This device is capable of operation over a broad
range of pulse widths and duty cycles. Low RF
thermal resistance and computerized automatic
wire bondi ng t echniqu es e nsure hig h rel iab ilit y an d
product consistency.
AM80814-025 is supplied in the industry-standard
AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching.
= 25 W MIN. WITH 7.0 dB GAIN
OUT
.400 x .400 2LFL (S036)
ORDER CO DE
AM80814-025
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
AM80814-025
L-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetically sealed
BRANDING
80814-25
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
August 1992
Power Dissipation*(TC ≤ 75˚C) 75 W
Device Current* 3.5 A
Collector-Supply Voltage* 38 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 2.3
case
= 25°C)
65 to +200
−
°
°
°
C/W
C
C
1/3
AM80814-025
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Valu e
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 10mA IE = 0mA 55 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 20mA RBE = 10Ω 55 — — V
VBE = 0V VCE = 28V — — 5 mA
VCE = 5V IC = 1A 15 — 150 —
Min. Typ. Max.
DYNAMIC
Value
Symbol Test Conditi ons
P
OUT
η
cf = 850 — 1400MHz PIN = 5.0W VCC = 35V 38 — — %
G
P
Note: Pulse Widt h
f = 850 — 1400MHz PIN = 5.0W VCC = 35V 25 — — W
f = 850 — 1400MHz PIN = 5.0W VCC = 35V 7.0 — — dB
120µS
=
Duty Cycle=4%
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
2/3
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