SGS Thomson Microelectronics AM80814-005 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATIO N
.EMITTER SITE BALLASTED
.5:1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
5.0 W MIN . WIT H 8.5 dB GAIN
=
.310 x . 310 2LF L (S 064)
ORDER CODE
AM80814-005
AM80814-005
hermetically sealed
BRANDING
80814-5
DESC RIPTION
The AM80814-005 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low thermal resistance and computerized automatic wire bonding
techniques ensure high reliability and product consistency.
The AM80814-005 is supplied inthe IMPAC Hermeti c M etal/ Cer amic package with int ernal
Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 23 W
Device Current* 1.0 A
Collector-Supply Voltage* 28 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature - 65 to +200
case
25°C)
=
PIN CONNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DA TA
R
TH(j-c)
*Appliesonly torated RF amplifieroperation
August 1992
Junction-Case Thermal Resistance* 6.5 °C/W
1/5
AM80814-005
ELECTRICAL SPECIFICATIONS (T
case
=
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 1mA IE= 0mA 48 — — V
I
1mA I
=
E
IC=5mA R
V
0V V
=
BE
0mA 3.5 — — V
=
C
10Ω 48 — — V
=
BE
28V — — 500 mA
=
CE
VCE= 5V IC= 250mA 30 — 300 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf
G
P
Note: Pulse Width
f=850 — 1400MHz P
850 — 1400MHz P
=
f=850 — 1400MHz P
120µS
=
Duty Cycle=4%
0.7W V
=
IN
0.7W V
=
IN
0.7W V
IN =
25°C)
Value
Min. T yp. Max.
Value
Min. Typ. Max.
28V 5.0 5.7 — W
=
CC
28V 35 40 — %
=
CC
28V 8.5 9.0 — dB
CC =
Unit
Unit
TYPICAL PERFORMAN CE
8
7
P
O
6
W
E
R
5
O
U
T
P
4
U
T
3
2
800 950 1100 1250 1400
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
(Watts)
P
IN
0.7
0.6
P
IN
0.5
PW=120µS
DC=4%
V
28 V
=
CC
FREQUENCY (MHz)
FREQUENCY (MHz)
0.5, 0.6W
=
P
=
IN
07W
90
C
85
O
L
80
L
E
75
C
T
70
O
R
65
E
60
F
F
55
I
C
50
I
E
45
N
C
40
Y
35
%
30
2/5
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