SGS Thomson Microelectronics AM80610-030 Datasheet
RF & MICROWAVE TRANSISTORS
UHF COMM UNICATI ONS APPLICATI ONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.INPUT/OUTPUT MATCHING
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
30 W MIN. WITH 8.5 dB GAIN
AM80610-030
.400 x .400 2NLF L (S042)
hermetically sealed
ORDER CODE
AM80610-030
DESCRIP T IO N
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.
The AM80610-030 is provided in the industrystandard, metal/ ceramic AMPAC hermetic
package.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C)
Device Current* 3.0 A
Collector-Supply Voltage* 32 V
Junction Temperature 200
Storage Temperature
case
= 25°C)
PIN CONNECTIO N
1. Collector 3. Emitter
2. Base 4. Base
57 W
− 65 to +200
BRAND I NG
80610-30
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly torated RF amplifier operation
Junction-CaseThermal Resistance* 2.6
°
C/W
AM8 0610-03 0
ELECTRICAL SPECIFI CATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC= 20 mA IE= 0mA
IE= 2mA IC=0mA
IC= 40 mA RBE= 10 Ω
VBE= 0V VCE= 28 V
VCE= 5V IC=2A
DYNAMIC
Symbol Test Conditions
P
OUT
η
G
f = 620 − 960 MHz PIN= 4.2 W VCC= 28 V
cf=620 − 960 MHz P
f = 620 − 960 MHz PIN= 4.2 W VCC= 28 V
P
= 4.2 W VCC= 28 V
IN
Value
Min. Typ. Max.
Uni t
55 — — V
3.5 — — V
55 — — V
— — 10 mA
15 — 150 —
Value
Min. Typ. Max.
Uni t
30——W
50 — — %
8.5 — — dB
TEST CIRCUIT
Dwg.No. C127464
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