SGS Thomson Microelectronics AM2931-110 Datasheet
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 3: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
105 W MIN. WITH 6.2 dB GAIN
OUT =
.400 x . 500 2L SF L (S 138)
ORDER CODE
AM2931-110
AM2931-110
hermetically sealed
BRANDING
2931-110
DESC RIPT ION
The AM2931-110 is a high power silicon bipolar
NPN transistor specifically designed for S-Band
radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding
techniques ensure high reliability and product consistency (including phase characteristics).
The AM2931-110 is supplied in the BIGPAC Hermetic Metal/ Cerami c package with i nternal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 375 W
Device Current* 12 A
Collector-Supply Voltage* 48 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RFamplifieroperation
August 1992
Junction-Case Thermal Resistance* 0.40 °C/W
1/4
AM2931-110
ELEC TRICAL SPEC I F ICA TIONS (Tcase = 25°C)
STATIC
Symbol Test Condition s
BV
CBO
BV
EBO
BV
CER
I
CES
h
FE
DYNAMIC
Symb ol Test Co n dit i o ns
P
OUT
η
cf=2900 — 3100MHz P
G
P
Note: Pulse Width
IC= 40mA IE= 0mA 55 — — V
IE= 8mA IC= 0mA 3.5 — — V
IC = 40mA RBE= 10Ω 55 — — V
VBE= 0V VCE= 42V — — 30 mA
VCE= 5V IC= 4A 30 — — —
f = 2900 — 3100MHz P
f = 2900 — 3100MHz P
50 µSec
=
Duty Cycle=10%
25W V
=
IN
25W V
=
IN
25W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
42V 105 115 — W
=
CC
42V 32 40 — %
=
CC
42V 6.2 6.6 — dB
=
CC
Unit
Uni t
TYPICAL PERFORM AN CE
TYPICAL BROADBAND
PERFORMANCE
PIN(W)
28
24
20
VCC- 42 Volts
PW - 50 µSec
DC - 10%
TC-25°C
PIN(W)
20
24
28
2/4
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