RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATION S
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
125 W MIN. WITH 7.0 dB GAIN
AM2729-125
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
DESCRIP TIO N
The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver
applications.
This device is characterized at 50 µsec pulse
width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles
and temperatures. Low RF thermal resistance,
refractory/gold metallization and computerized
automatic wire bonding techniques ensure high
relia b ilit y and product consiste n cy (inclu d in g
phase characteristics).
The AM2729-125 is supplied in the BIGPAC
Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is
intended for military and other high reliability applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS Power Dissipation* (T
Device Current* 16 A
Collector-Supply Voltage* 45 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
T
V
I
C
CC
T
J
STG
case
C
= 25°C)
≤ 75°C)
AM2729-125
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
500 W
− 65 to +200
BRAN DI NG
2729-125
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Appliesonly torated RF amplifieroperation
Junction-CaseThermal Resistance* 0.35
°
C/W
AM2 729-125
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CES
CES
h
FE
IC= 50 mA IE= 0mA
IE= 10 mA IC= 0mA
IC= 50 mA VBE= 0V
VBE= 0V VCE= 40 V
VCE= 5V IC=5A
DYNAMIC
Symbol Test Conditions
P
OUT f = 2700 − 2900 MHz P
η
cf=2700 − 2900 MHz P
G
P f = 2700 − 2900 MHz P
Note: P ulse Width
Duty Cycle
50µSec
=
10%
=
25 W V
IN =
25 W V
IN =
25 W V
IN =
CC =
CC =
CC =
40 V
40 V
40 V
Value
Min. Typ . Max.
Uni t
55 65 — V
3.5 4.5 — V
55 65 — V
— — 40 mA
30 80 300 —
Value
Min. Typ. Max.
Uni t
125——W
35 — — %
7.0 — — dB
TYPICAL PERFOR MANCE
TYPICAL BROADBAND
EFFICIENCY
TYPICAL BROADBAND
PERFORMANCE
TYPICAL PERFOR MANCE (cont’d)
AM2 729-125
TYPICAL EFFICIENCY @ 2.7 GHz
TYPICAL EFFICIENCY @ 2.8 GHz
TYPICAL PERFORMANCE @ 2.7 GHz
TYPICAL PERFORMANCE @ 2.8 GHz
TYPICAL EFFICIENCY @ 2.9 GHz
TYPICAL PERFORMANCE @ 2.9 GHz
IMPEDANCE DATA
AM2 729-125
Z
IN
L
M
H
Z
CL
H
M
FREQ.
H = 2.9 GHz
M = 2.8 GHz
L = 2.7 GHz
L
(Ω)Z
Z
IN
8.8 + j 7.3
9.4 + j 8.2
9.9 + j 9.1
(Ω)
CL
3.7 − j 2.7
4.1 − j 2.9
4.4 − j 3.2
P
= 25 W
IN
= 40 V
V
CC
Normalizedto 50 ohms
TEST CIRCUIT
All dimensions are in inches
AM2 729-125
C1 : 1000pf RF Feedthrough
C2 : 0.1µF, 100V Ceramic Capacitor
C3 : 33pf MicrowaveChip Capacitor
C4 : 100µF, 63V Electrolytic Capacitor
L1, L2 : #26 Wire, 2 Turns, 0.08” I.D.
Board Material: Alumina, Er = 9.6, H = 25mil
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0212 rev. A
AM2 729-125
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
RF Products Group 141 Commerce Drive Montogomeryville, PA18936 tel 215-361-6400 fax 215-362-1293
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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