SGS Thomson Microelectronics AM2729-110 Datasheet
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.3:1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
105 W MIN. WITH 6.5 dB GAIN
.400 x . 500 2L SFL (S138)
ORDER CODE
AM2729-110
AM2729-110
hermetically sealed
BRANDING
2729-110
DESCRIPT ION
The AM2729-110 device is a high power silicon
bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding
techniques ensure high reliability and product consistency (including phase characteristics).
The AM2729-110 is supplied inthe BIGPAC Hermetic Metal/ Cerami c package wi th i nternal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
ABSOLU TE MAXI MUM R AT ING S (T
Symbol Parameter Value Unit
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 438 W
Device Current* 12 A
Collector-Supply Voltage* 48 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CONNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RF amplifieroperation
August 1992
Junction-Case Thermal Resistance* 0.4 °C/W
1/4
AM2729-110
ELEC TRICAL SPE CIF ICA TIONS (Tcase = 25°C)
STATIC
Symbol Test Condition s
BV
CBO
BV
EBO
BV
CER
I
CES
h
FE
DYNAMIC
Symb ol Test Condit i o ns
P
OUT
η
cf=2700 — 2900MHz P
G
P
Note: Pulse Widt h
IC= 40mA IE= 0mA 55 — — V
IE= 8mA IC= 0mA 3.5 — — V
IC = 40mA RBE= 10Ω 55 — — V
VBE= 0V VCE= 40V — — 30 mA
VCE= 5V IC= 4A 30 — — —
f = 2700 — 2900MHz P
f = 2700 — 2900MHz P
50 µSec
=
Duty Cycle=10%
23.5W V
=
IN
23.5W V
=
IN
23.5W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
40V 105 115 — W
=
CC
40V 33 40 — %
=
CC
40V 6.5 6.9 — dB
=
CC
Unit
Uni t
TYPICAL PERFORMAN CE
TYPI CAL BROADBAND
PERFORMANCE
PIN(W)
28
24
20
VCC- 40 Volts
PW - 50 µsec
DC - 10%
TC-25°C
PIN(W)
20
24
28
2/4
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