RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
325 W MIN. WITH 6.4 dB GAIN
=
AM1214-325
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-325
PIN CONNE C TIO N
DESCRI PTIO N
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPAC Hermetic M etal /Ceram ic package with i nternal
Input/Output matching structures.
ABSOLU TE MAXI MUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 1250 W
Device Current* 25 A
Collector-Supply Voltage* 45 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
=
25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
1214-325
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.10
°
C/W
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AM1214-325
ELEC TRICAL SPECIFICATIONS (Tcase=25°C)
STATIC
Symbol Test Condition s
BV
CBO
BV
EBO
BV
CES
I
CES
h
FE
DYNAMIC
Symb ol Test Conditio ns
P
OUT
η
cf=1200 — 1400MHz P
G
P
Note: Pulse W idth
IC= 50mA IE= 0mA 65 — — V
IE= 15mA IC= 0mA 3.0 — — V
IC = 50mA 65 — — V
VCE= 50V — — 30 mA
VCE= 5V IC= 5A 10 — — —
f = 1200 — 1400MHz P
f = 1200 — 1400MHz P
13µSec
=
Duty Cycl e=2%
75W V
=
IN
75W V
=
IN
75W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
45V 325 360 — W
=
CC
45V 38 45 — %
=
CC
45V 6.4 6.8 — dB
=
CC
Unit
Uni t
TYPICAL PERFORMAN CE
POWER OUTPUT & EFFICIENCY
vs FREQUENCY
2/4
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
AM1214-325
Z
CL
FREQ.
ZIN(Ω)Z
L=1.2 GHz 4.0 + j 3.5 3.0 − j 3.0
M=1.3 GHz 3.0 + j 4.0 2.0 − j 2.5
H=1.4 GHz 2.0 + j 3.5 1.0 − j 2.0
TEST CIRCUIT
CL
(Ω)
P
75 W
=
IN
V
CC
=
45 V
Normalized to 50 ohms
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AM1214-325
PACKAGE MECHANICAL DATA
Information furnishedis believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license isgranted by implication or otherwise underany patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare not authorized foruse ascritical componentsinlife supportdevices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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