SGS Thomson Microelectronics AM1214-325 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
325 W MIN. WITH 6.4 dB GAIN
=
AM1214-325
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-325
PIN CONNE C TIO N
DESCRI PTIO N
The AM1214-325 device is a high power transistor
specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 VSWR at rated
RF conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
The AM1214-325 is supplied in the BIGPAC Hermetic M etal /Ceram ic package with i nternal
Input/Output matching structures.
ABSOLU TE MAXI MUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 1250 W
Device Current* 25 A
Collector-Supply Voltage* 45 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
=
25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
1214-325
°
C
°
C
THERMA L DAT A
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.10
°
C/W
1/4
AM1214-325
ELEC TRICAL SPECIFICATIONS (Tcase=25°C)
STATIC
Symbol Test Condition s
BV
CBO
BV
EBO
BV
CES
I
CES
h
FE
DYNAMIC
Symb ol Test Conditio ns
P
OUT
η
cf=1200 — 1400MHz P
G
P
Note: Pulse W idth
IC= 50mA IE= 0mA 65 — — V
IE= 15mA IC= 0mA 3.0 — — V
IC = 50mA 65 — — V
VCE= 50V — — 30 mA
VCE= 5V IC= 5A 10 — — —
f = 1200 — 1400MHz P
f = 1200 — 1400MHz P
13µSec
=
Duty Cycl e=2%
75W V
=
IN
75W V
=
IN
75W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
45V 325 360 — W
=
CC
45V 38 45 — %
=
CC
45V 6.4 6.8 — dB
=
CC
Unit
Uni t
TYPICAL PERFORMAN CE
POWER OUTPUT & EFFICIENCY
vs FREQUENCY
2/4
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