SGS Thomson Microelectronics AM1214-300 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 5: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 270 W MIN. WITH 6.3 dB GAIN
OUT
AM1214-300
.400 x .500 2L F L (S038)
hermetically sealed
ORDER CODE
AM1214-300
DESCRIPTIO N
The AM1214-300 device is a high power transistor
specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 5:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1214-300 is supplied in the BIGPAC Hermetic M etal/ Cerami c package wi th i nternal
Input/Output matching structures.
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 730 W
Device Current* 18.75 A
Collector-Supply Voltage* 55 V
Junction Temperature (PulsedRF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
1214-300
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.24
°
C/W
1/6
AM1214-300
ELEC TRICAL SPEC IFICATI ONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CES
FE
IC= 50mA IE= 0mA 65 — — V
I
15mA IC= 0mA 3.0 — — V
E =
IC = 50mA 65 — — V
VCE= 50V — — 30 mA
VCE= 5V IC= 5A 10 — — —
DYNAMIC
Symb ol Test Co n dit i on s
P
OUT
η
cf=1235 — 1365MHz P
G
P
Note: Pulse Width
f = 1235 — 1365MHz P
f = 1235 — 1365MHz P
50µSec
=
Duty Cycl e=4%
63W V
=
IN
63W V
IN =
63W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
50V 270 300 — W
=
CC
50V 40 45 — %
CC =
50V 6.3 6.8 — dB
=
CC
Unit
Uni t
2/6
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