SGS Thomson Microelectronics AM1214-200 Datasheet
RF & MICROWAVE TRAN SIST ORS
L-BAND RADAR APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
DESC RIPTION
The AM1214-200 device is a high power Class
C transistor specifically designedfor L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAC hermetic
metal/ceramic package with internal input/output
matching structures.
200 W MIN. WITH 7.0 dB GAIN
=
.400 x .500 2LFL ( M205)
ORDER CODE
AM1214-200
PIN CO NNE C TIO N
1. Collector 3. Emitter
2. Base 4. Base
AM1214-200
PRELIMINARY DATA
hermetically sealed
BRANDING
1214-200
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RF amplifieroperation
September 1992
Power Dissipation* (TC≤ 100°C) 575 W
Device Current* 16 A
Collector-Supply Voltage* 40 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 0.26
case
= 25°C)
°
°
°
C/W
C
C
1/4
AM1214-200
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CES
FE
IC= 50mA IE= 0mA 70 — — V
IE= 30mA IC= 0mA 3.0 — — V
IC = 50mA VBE= 0V 70 — — V
VBE= 0V VCE= 40V — — 30 mA
VCE= 5V IC= 500mA 10 — — —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=1215 — 1400MHz P
G
P
Note: Pulse Width
f = 1215 — 1400MHz P
f = 1215 — 1400MHz P
150µSec
=
Duty Cycle=5%
40W V
=
IN
40W V
=
IN
40W V
=
IN
Value
Min. T yp. Max.
Value
Min. Typ. Max.
40V 200 — — W
=
CC
40V 45 — — %
=
CC
40V 7.0 — — dB
=
CC
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4
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