SGS Thomson Microelectronics AM1214-175 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. 3: 1 VSWR CAPABILITY
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 160 W MIN. WITH 7.3 dB GAIN
OUT
AM1214-175
.400 x . 500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1214-175
DESC RIPT ION
The AM1214-175 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM1214-175 is supplied in the BIGPAC Hermetic M etal/ Cerami c package wi th i nternal
Input/Output matching structures.
ABSOLU TE MAXIMUM RAT ING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 330 W
Device Current* 14 A
Collector-Supply Voltage* 45 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CONNEC TIO N
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
1214-175
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly torated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.45 °C/W
1/6
AM1214-175
ELEC TRICAL SPECI F ICA TI ONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CES
FE
IC= 60mA IE= 0mA 65 — — V
IE= 10mA IC= 0mA 3.5 — — V
IC = 100mA 65 — — V
VCE= 40V — — 25 mA
VCE= 5V IC= 5A 15 — 150 —
DYNAMIC
Symb ol Test Condi tions
P
OUT
η
cf=1215 — 1400MHz P
G
P
Note: Pulse Widt h
f = 1215 — 1400MHz P
f = 1215 — 1400MHz P
150µS
=
Duty Cycl e=5%
30W V
=
IN
30W V
=
IN
30W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
40V 160 180 — W
=
CC
40V 45 50 — %
=
CC
40V 7.3 7.8 — dB
=
CC
Unit
Unit
2/6
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