SGS Thomson Microelectronics AM1214-100 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 100 W MIN. WITH 6.0 dB GAIN
OUT
.400 x .5 00 2LFL ( S 03 8)
ORDER CO DE
AM1214-100
AM1214-100
L-BAND RADAR APPLICATIONS
PRELIMINARY DATA
hermetically sealed
BRANDI NG
1214-100
DESCRIPTION
The AM1214-100 device is a high power Class
C transisto r specific ally desi gned for L-Ban d Radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output
VSWR at rated RF conditions. Low RF thermal
resistance an d compu teri zed au tomati c wire bon ding techniques ensure high reliability and product
consistency.
AM1214-100 is su pplied in the grounded IMPAC™
hermetic metal/ceramic package with internal
input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* (TC ≤ 100˚C) 270 W
Device Current* 13.5 A
Collector-Supply Voltage* 32 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
case
= 25°C)
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
August 1992
Junction-Case Thermal Resistance* 0.55
°
C/W
1/3
AM1214-100
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Valu e
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CES
CES
h
FE
IC = 50mA IE = 0mA 65 — — V
IE = 10mA IC = 0mA 3.5 — — V
IC = 100mA 65 — — V
VBE = 0V VCE = 32V — — 20 mA
VCE = 5V IC = 5A 15 — — —
Min. Typ. Max.
DYNAMIC
Value
Symbol Test Conditi ons
P
OUT
η
cf = 1215 — 1400MHz PIN = 25W VCC = 28V 50 — — %
G
P
Note: Pulse Widt h
f = 1215 — 1400MHz PIN = 25W VCC = 28V 100 — — W
f = 1215 — 1400MHz PIN = 25W VCC = 28V 6.0 — — dB
100µSec
=
Duty Cycle=10%
Min. Typ. Max.
Unit
Unit
PACKAGE MECHANICAL DATA
2/3
Loading...