SGS Thomson Microelectronics AM1011-500 Datasheet
AM1011-500
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICAT ION S
.P
OUT =
GAIN
500 W MIN. WITH 8.5 dB MIN.
.10:1 LOAD VSWR CAPABILITY @ 10µS.,
1% DUTY
.SIXPAC HERMETIC METAL/CERAMIC
PACKAGE
.EMITTER SITE BALLASTED OVERLAY
GEOMETRY
.REFRACTORY/GOLD METALLIZATION
.LOW THERMAL RESISTANCE
.INTERNAL INPUT/OUTPUT MATCHING
.CHARACTERIZED UNDER 32µS.,2%
DUTY CYCLE PULSE CONDITIONS
DESCRIP T IO N
The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Avionic applications involving high pulse burst duty
cycles.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM1011-500 is supplied in the SIXPAC
Hermetic metal/ceramic package with internal input/output matching structures.
.400 x .600 2LFL (M198)
ORDER CODE
AM1011-500
PIN CONNECTI O N
1. Collector 3. Emitter
2. Base 4. Base
hermetically sealed
BRAN DI NG
1011-500
ABSOLUTE MAXIM UM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Appliesonly torated RF amplifieroperation
Power Dissipation* (TC≤ 100°C)
Device Current* 27 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-CaseThermal Resistance* 0.11
case
= 25°C)
1,360 W
− 65 to +200
°
°
°
C/W
C
C
AM1 011-500
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO
BV
EBO
BV
CES I
I
CES V
h
FE V
IC= 50 mA IE= 0mA
IE= 30 mA IC= 0mA
= 50 mA VBE= 0V
C
= 0V VCE= 50 V
BE
= 5V IC=1.0 A
CE
DYNAMIC
Symbol Test Conditions
P
OUT f = 1090 MHz P
hc
G
Load
Mismatch
Note: Pulse Width
f = 1090 MHz P
P f = 1090 MHz P
= 500 W Peak VSWR = 10:1, 10µS, 1% Duty
P
OUT
F=1090MHz VSWR=5:1, 32µS, 2% Duty
= 50 V
V
CC
32µSec, Duty Cycle
=
70 W V
IN =
OUT =
OUT =
2%
=
500 W V
500 W V
CC =
CC =
CC =
50 V
50 V
50 V
Value
Min. Typ . Max.
Uni t
70 — — V
3.0 — — V
70 — — V
— — 40 mA
10 — 200 —
Value
Min. Typ. Max.
Uni t
500——W
40 — — %
8.5 — — dB
No Degradation in Output
Power
TYPICAL PERFO R MANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
OUT
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P
OUT
η
C
η
C
* Pulse Burst conditions:
128 µSec train, 0.5 µSec on,
0.5 µSec off; with a period of 6.4 msec.
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