SGS Thomson Microelectronics AM1011-400 Datasheet
RF & MICROWAVE TRANSISTORS
L-BAND AVI ONICS APPL ICATIO NS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.15:1 VSWR CAPABILITY
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT
400 W MIN. WITH 8.0 dB GAIN
=
.400 x . 500 2LFL (S038)
ORDER CODE
AM1011-400
AM1011-400
hermetically sealed
BRAND I NG
1011-400
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1011-400 is supplied in the BIGPAC Hermetic Metal/Ceramic package Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 880 W
Device Current* 24 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CONNEC TIO N
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.17 °C/W
1/6
AM1011-400
ELEC TRIC AL SPECI F IC A TI ONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 50mA IE= 0mA 65 — — V
IE= 15mA IC= 0mA 3.5 — — V
IC = 50mA RBE= 10Ω 65 — — V
VBE= 50V VCE= 0V — — 30 mA
VCE= 5V IC= 5A 10 — — —
DYNAMIC
Symb ol Test Condi t i o ns
P
OUT
η
cf=1090MHz P
G
P
Note: Pulse Widt h
f = 1090MHz P
f = 1090MHz P
32µSec
=
Duty Cycl e=2%
63W V
=
IN
63W V
=
IN
63W V
=
IN
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
50V 400 450 — W
=
CC
50V 45 50 — %
=
CC
50V 8.0 8.5 — dB
=
CC
Unit
Uni t
2/6
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