SGS Thomson Microelectronics AM1011-300 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTING
.LOW RF THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
325 W MIN. WITH 7.7 dB GAIN
.1030/1090 MHZ OPERATION
AM1011-300
AVIONI CS APPLICAT IONS
.400x.6002LFL(M207)
hermeticallysealed
ORDER C OD E
AM1011-300
PI N CONNECTION
DESCRIP TION
The AM1011-300 is a rugged, Class C common
base device specifically designed for new ModeS interrogator and transponder applications.
Minimal amplitude droop over the heavy Mode-S
pulse burst is guaranteedby a thermal design incorporating an overlay site-ballasted die geometry.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
V
T
DISS
I
C
CC
T
J
STG
Power Dissipation (TC≤100°C)*
Device Current* 36 A
Collector-SupplyVoltage* 43 V
Junction Temperature(Pulsed RF operation) +250
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
1070 W
65 to +200
−
BRAND I NG
AM1011-300
°
C
°
C
THERMAL DAT A
R
TH(j-c)
*Applies onlytoratedRF amplifieroperation.
December 9, 1997 1/5
Junction-CaseThermal Resistance* 0.14
°C/W
AM1011-300
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 75 mA IE= 0mA
IC= 75 mA VBE= 0V
IC= 25 mA IC= 0mA
VCE= 40 V VBE= 0V
VCE= 5V IC=10 A
DYNAMIC
Symbol Test Condi tions
P
OUT f = 1090 MHz P
hc
G
Pulse Conditi ons: Pulse w idth = 200µs , Duty C ycle = 5%, are equi valent t o the foll owing
f = 1090 MHz P
P f = 1090 MHz P
puls e burst c ondit i ons:
Mode- S Int er rogato r (f r eq = 1030MH z)
32 pulses, 32µs on, 18µs off, burst perio d = 17.6ms
long term duty = 5.82%
= 55 W VCC= 40 V
IN
= 325 W VCC= 40 V
OUT
= 325 W VCC= 40 V
OUT
Value
Min. Typ. Max.
Uni t
65 — — V
65 — — V
3.0 — — V
— — 30 mA
10———
Value
Min. Typ. Max.
Uni t
325 350 — W
40 45 — %
7.7 8.0 — dB
2/5 December 9, 1997
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