SGS Thomson Microelectronics AM1011-070 Datasheet
RF & MICROWAVE T RANSISTORS
L-BAND AVION ICS A PPLICA TIONS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 70 W MIN. WITH 6.7 dB GAIN
OUT
AM1011-070
.400 x .400 2NL F L (S 042)
hermetically sealed
ORDER CODE
AM1011-70
DESCRIPTION
The AM1011-070 device is a high power Class
C t rans ist or spec ifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM1011-070 is supplied in the AMPAC Her-
metic Met al/C eramic package with i nternal
Input/Output matching structures.
ABSOLU TE M AXI MUM RATING S (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 100°C) 200 W
Device Current* 8.0 A
Collector-Supply Voltage* 32 V
Junction Temperature (PulsedRF Operation) 250
Storage Temperature − 65 to +200
case
= 25°C)
PIN CON NE CTI ON
1. Collector 3. Emitter
2. Base 4. Base
BRAND I NG
1011-70
°
C
°
C
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RFamplifieroperation
September 1992
Junction-Case Thermal Resistance* 0.68 °C/W
1/4
AM1011-070
ELEC TRIC AL SPEC IFICATI ON S (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 25mA IE= 0mA 55 — — V
IE= 10mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 55 — — V
VCE= 35V — — 20 mA
VCE= 5V IC= 2mA 20 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond itions
P
OUT
η
cf= 1090 MHz PIN= 15W VCC= 28V 45 — — %
G
P
Note: Pulse Width = 100µSec
f = 1090 MHz PIN= 15W VCC= 28V 70 — — W
f = 1090 MHz PIN= 15W VCC= 28V 6.7 — — dB
Duty Cycle = 2%
Value
Min. Typ. Max.
Unit
Unit
2/4
Loading...