SGS Thomson Microelectronics AM0912-150 Datasheet
RF & MICROWAVE TRAN SIST ORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
. LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.O VERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 150 W MIN. WITH 7.5 dB GAIN
OUT
.BANDWIDT H = 255MHz
AM0912-150
AVIONI CS APPLICAT IONS
.400 x . 500 2LFL (S038)
hermetically sealed
ORDER CODE
AM0912-150
PIN CONNEC TIO N
BRANDING
0912-150
DESC RIPT ION
The AM0912-150 is des i gned for speciali z ed
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst
or overall duty cycles.
The AM0912-150 is housed in the unique BIGPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures.
ABSOLU TE MAXIMUM RAT ING S (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Power Dissipation* (TC≤ 100°C) 300 W
Device Current* 16.5 A
Collector-Supply Voltage* 35 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 0.57 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
C
°
C
*Appliesonly to rated RFamplifieroperation
September 1992
1/6
AM0912-150
ELEC TRICAL SPECI F ICA TI ONS (T
case
= 25°C)
STATIC
Symbol Test Condi tion s
BV
BV
BV
I
CES
h
CBO
EBO
CES
FE
IC= 60mA IE= 0mA 55 65 — V
IE= 10mA IC= 0mA 3.5 — — V
IC = 100mA 55 — — V
VCE= 35V — — 25 mA
VCE= 5V IC= 5A 20 — — —
DYNAMIC
Symb ol Test Condi tions
P
OUT
η
cf=960 — 1215MHz P
G
P
Note: Pulse Format: 6.4 µSon6.6µS off; repea t for 3.3 ms, then off for 4. 5125 ms
f = 960 — 1215MHz P
f = 960 — 1215MHz P
Duty Cycle: Burst 49.2% overall 20.8%
26.7W V
=
IN
26.7W V
=
IN
26.7W V
=
IN
35V 150 — — W
=
CC
35V 45 — — %
=
CC
35V 7.5 — — dB
=
CC
Value
Min. Typ. M ax.
Value
Min. Typ. Max.
Unit
Uni t
2/6
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