SGS Thomson Microelectronics AM0912-080 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.EMITTER SITE BALLASTED
.LOW THERMAL RESISTANCE
.INPUT/OUTPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 90 W MIN. WITH 13 dB GAIN
OUT
.BANDWIDTH 225 MHz
.400 x .400 2NLFL (S042)
ORDER CO DE
AM0912-080
AM0912-080
AVIONICS APPLICATIONS
hermetically sealed
BRANDI NG
0912-80
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device specifically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width cons trai nts such as grou nd/shi p base d
DME/TACAN.
This device is also designed for specialized applications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0912-080 is housed in the unique
AMPAC™ Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
T
STG
C
CC
J
Power Dissipation* (TC ≤100˚C) 220 W
Device Current* 7.0 A
Collector-Supply Voltage* 50 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
case
= 25°C)
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
September 1992
Junction-Case Thermal Resistance* 0.80
°
C/W
1/3
AM0912-080
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC = 40mA IE = 0mA 65 — — V
IE = 10mA IC = 0mA 3.0 — — V
IC = 40mA RBE = 10Ω 65 — — V
VCB = 50V — — 12 mA
VCE = 5V IC = 2A 20 — 120 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf = 960 — 1215MHz PIN = 13W VCC = 50V 38 44 — %
G
P
Note: Pulse Widt h
f = 960 — 1215MHz PIN = 13W VCC = 50V 90 100 — W
f = 960 — 1215MHz PIN = 13W VCC = 50V 8.4 — — dB
10µSec
=
Duty Cycle=10%
Value
Min. Typ. Max.
Unit
Unit
TEST CIRCUIT
Ref. Dwg. No. J-313120
All dimensions are in inches.
Substrate material: .025 thick AI2O
C1,C2: 0.3 - 3.5 pF Johanson Capacitors, or Equiv.
C3 : 100 pF Chip Capacitor
C4,C6: 1500 pF RF Feedthru
3
.120
C5 : 100 MF, Electrolytic 50V
L1,L2 : No. 32 Wire, 4 Turn .062 I.D.
RBE : 0 - 1.0 Ohm
2/3
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