SGS Thomson Microelectronics AM0608-450 Datasheet
RF & MICROWAVE TRANSISTORS
.REFRACTORY/GOLD METALLIZATION
.INPUT MATCHING
.OVERLAY GEOMETRY
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 445 W MIN. WITH 6.9 dB GAIN
OUT
.400 x .5 00 2LFL ( S 03 8)
ORDER CO DE
AM0608-450
PIN CONNECTION
AM0608-450
AVIONICS APPLICATIONS
PRELIMINARY DATA
hermetically sealed
BRANDING
0608-450
DESCRIPTION
The AM0608-450 is an internally-matched, common base silicon bipolar device optimized pulsed
application in the 600 - 750 MHz frequency range.
Housed in the industry-standard BIGPAC™ metal/ceramic package, this device uses a refractory/gold over lay die geome try for ru gged ness and
long-term reliability.
ABSOLUTE M AXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
Power Dissipation* (TC ≤ 50˚C) 1500 W
Device Current* 32 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 0.13
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
°
°
C/W
C
C
August 1992
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AM0608-450
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
I
CBO
EBO
CER
CES
CBO
h
FE
IC = 50mA IE = 0mA 65 — — V
IE = 5mA IC = 0mA 3.5 — — V
IC = 50mA RBE = 10Ω 65 — — V
VCE = 50V — — 3 5 m A
VCB = 50V — — 25 mA
VCE = 5V IC = 1A 15 — 300 —
DYNAMIC
Symbol Test C ond iti ons
P
OUT
η
cf = 600 — 750MHz P
G
P
Note: Pulse Widt h
f = 600 — 750MHz P
f = 600 — 750MHz P
10µS
=
Duty Cycle=1%
90W VCC = 50V 445 — — W
=
IN
90W VCC = 50V 35 — — %
=
IN
90W VCC = 50V 6.9 — — dB
=
IN
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TEST CIRCUIT
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