SGS Thomson Microelectronics AM0608-200 Datasheet

RF & MICROWAVE TRANSISTORS

.REFRACTORY/GOLD METALLIZATION

.INTERNAL INPUT MATCHING

.METAL/CERAMIC HERMETIC PACKAGE

.P

= 220 W MIN. WITH 8.7 dB GAIN

OUT

.400 x . 40 0 2NLFL (S042)

ORDER CO DE

AM0608-200

PIN CONNECTION

AM0608-200

AVIONICS APPLICATIONS

PRELIMINARY DATA

hermetically sealed

BRANDING

0608-200

DESCRIPTION

The AM0608-200 is an internally-matched, com­mon base silicon bipolar device optimized pulsed
application in the 600 - 750 MHz fr equency range.
Housed in the industry-standard AMPAC™ met­al/ceramic package, this device uses a refrac­tory/gold overlay die g eom etry for ruggedness and
long-term reliability.

ABSOLUTE MAXIMUM RATINGS (T

Symbol Parameter Value Unit

P

DISS

I

C

V

CC

T

J

T

STG

THERMAL DATA

R

TH(j-c)

*Applies only to rated RF amplifier operation

Power Dissipation* (TC ≤ 75˚C) 875 W
Device Current* 16.0 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature

Junction-Case Thermal Resistance* 0.20

case

= 25°C)

1. Collector 3. Emitter

2. Base 4. Base

65 to +200

−

°
°

°

C/W

C
C

August 1992

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AM0608-200

ELECTRICAL SPECIFICATIONS (T

case

= 25°C)

STATIC

Valu e

Symbol Test Condi tions

BV
BV
BV

I

CBO
EBO
CER

CES

h

FE

IC = 10mA IE = 0mA 65 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 25mA RBE = 10Ω 65 — — V
VBE = 0V VCE = 50V — — 25 mA
VCE = 5V IC = 1mA 15 — 120 —

Min. Typ. Max.

DYNAMIC

Value

Symbol Test Conditi ons

P

OUT

η

cf = 600 — 750MHz PIN = 30W VCC = 50V 40 — — %

G

P

Note: Pulse Widt h

f = 600 — 750MHz PIN = 30W VCC = 50V 220 — — W

f = 600 — 750MHz PIN = 30W VCC = 50V 8.7 — — dB

10µSec

=

Duty Cycle=1%

Min. Typ. Max.

Unit

Unit

PACKAGE MECHANICAL DATA

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