SGS Thomson Microelectronics ADB18PS Datasheet
ADB18PS
February 1998 - Ed: 2
Peakpulse powerdissipation100W (8/20µs)
Stand-offvoltage:18 V
MaximumDCcurrent: 0.5 A
Clampingvoltage:V
CL
< 50 V (8/20 µs)
FEATURES
PPAK-5L
1
TAB
2
3
4
5
PIN-OUTCONFIGURATION
1
5
2
4
Protectioncombinedwith rectification
Highreliabilityconferedby monolithicconstruction
Spacesaving
Costeffective solution
BENEFITS
AUTOPROTECTED
DIODE BRIDGE
Application Specific Discretes
A.S.D.
TM
Any electronic equipment needing a diode bridge
andprotection against transientovervoltage:
CallerId
Handset
MAINAPPLICATIONS
The ADB18PS combines a diode bridge and a
clampingprotection function.
Integrated monolithically within a SMD package,
this device allows space saving and greater
reliability.
It provides both rectificationand protectionfor low
powerequipment directlysuppliedby mains.
DESCRIPTION
Pin Description
1 DC output
2 AC input
3 Notaccessible
4 AC input
5 DC output
TAB Not to be connected
1/3
Symbol Parameter Testconditions Value Unit
P
PP
Peak pulsepowerdissipation(one pulse) 8 /20 µs 100 W
P Powerdissipation T
case
=70°C20W
V
RRM
Repetitivepeak reversevoltage 18 V
I
PP
Peak pulsereversecurrent (one pulse) 8 / 20µs2A
I
F
Forwardcurrent for onediode 0.5 A
I
FSM
Non repetitivesurge peakforward current tp= 8.3ms
t
p
=10ms
8
7.5
A
T
stg
Storagetemperaturerange -40 to 150 °C
T
j
Maximumjunction temperature 150 °C
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C, unless otherwise specified)
APPLICATIONCIRCUIT : Caller Id interface
Symbol Parameter Testconditions Typ Max Unit
V
CL
Clampingvoltage IPP=2 A 8/20µs50V
I
RM
Leakagecurrent VRM=18V 2
µ
A
V
F
Forwardvoltage for one diode IF= 500mA 1.4 V
C Capacitance
V
R
=0V,F=1MHz
50 pF
ELECTRICALCHARACTERISTICS (T
amb
=25°C).
Symbol Parameter Value Unit
R
th(j-a)
Junctionto ambienton FR4 (0.5 cm2)
80 °C/W
R
th(j-a)
Junctionto ambienton IMS (17 cm2)30°C/W
R
th(j-c)
Junctionto case
4 °C/W
THERMAL RESISTANCES
ADB18PS
2/3
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