SGS Thomson Microelectronics ACST4-7SFP, ACST4-7SB, ACST4-7CFP, ACST4-7CB Datasheet
®
ASD™
AC Switch Family
MAIN APPLICATIONS
AC static switching in appliance control systems
■
Drive of low power high inductive or resistive
■
loads like
- spray pump in dishwashers
- fan in air-conditioners
FEATURES
Blocking voltage : V
■
Avalanche controlled : VCLtyp = 1100 V
■
Nominal conducting current : I
■
High surge current capability: 30A for 20ms full
■
DRM/VRRM
wave
■ Gate triggering current : I
Switch integrated driver
■
■ High noise immunity : static dV/dt >500V/µs
GT
BENEFITS
■ Enables equipment to meet IEC 61000-4-5
■
High off-state reliability with planar technology
■
No external overvoltage protection needed
■
Reduces the power component factor
■
Interfaces directly with the microcontroller
■
Direct interface with the microcontroller for the
ACST4-7S (I
< 10mA)
GT
= +/-700V
=4A
T(RMS)
< 10 mA or 25mA
ACST4 Series
AC POWER SWITCH
OUT
DPAK
ACST4-7SB/CB
TO-220FPAB
ACST4-7SFP/CFP
FUNCTIONAL DIAGRAM
OUT
COM
G
OUT
COM
G
DESCRIPTION
The ACST4 belongs to the AC power switch family
built around the ASD™ technology. This high performance device is adapted to home appliances or
inductrial systems and drives loads up to 4 A.
The ACS™ switch embeds a Triac structure with a
high voltage clamping device to absorb the inductive turn-off energy and withstand line transients
suchasthosedescribedinthe IEC61000-4-5 standards.
January 2003 - Ed: 3A
COM G
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ACST4 Series
ABSOLUTE RATINGS (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol Parameter Value Unit
V
DRM/VRRM
I
T(RMS)
I
TSM
2
I
t Fusing capability tp = 10ms 6.4 A²s
dI/dt Repetitiveon-state current critical rate
V
PP
Tstg Storagetemperature range - 40 to + 150 °C
Tj Operating junction temperature range - 30 to + 125 °C
Tl Maximum lead soldering temperature during 10s 260 °C
Note 1: according to test described by IEC61000-4-5 standard & Figure B.
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
P
G (AV)
P
GM
I
GM
Repetitive peak off-state voltage Tj = -10 °C 700 V
RMS on-state current full cycle sine
wave 50 to 60 Hz
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
of rise I
= 10mA (tr < 100ns)
G
Non repetitive line peak pulse voltage
DPAK Tc = 110 °C 4 A
TO-220FPAB Tc = 100 °C
F =50 Hz 30 A
F =60 Hz 33 A
Tj = 125°C
F = 120 Hz 50 A/µs
note 1
2kV
Average gate power dissipation 0.1 W
Peak gate power dissipation (tp = 20µs) 10 A
Peak gate current (tp = 20µs) 1 V
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient S = 0.5cm² DPAK 70 °C/W
TO-220FPAB 60 °C/W
Rth (j-l) Junction to case for full cycle sine wave
conduction
S = Copper surface under Tab
DPAK 2.6 °C/W
TO-220FPAB 4.6 °C/W
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PARAMETER DESCRIPTION
Parameter Symbol Parameter description
ACST4 Series
I
GT
V
GT
V
GD
I
H
I
L
V
TM
V
TO
Triggering gate current
Triggering gate voltage
Non-triggering gate voltage
Holding current
Latching current
Peak on-state voltage drop
On state threshold voltage
Rd On state dynamic resistance
I
DRM/IRRM
Maximum forward or reverse leakage current
dV/dt Critical rate of rise of off-state voltage
(dV/dt)c Critical rate of rise of commutating off-state voltage
(dI/dt)c Critical rate of decrease of commutating on-state current
V
CL
I
CL
Clamping voltage
Clamping current
ELECTRICAL CHARACTERISTICS
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage.
Symbol Test Conditions ACST4-7S ACST4-7C Unit
I
GT
V
GT
V
GD
I
H
I
L
V
TM
V
TO
Rd Tj=125°C MAX 100 mΩ
I
DRM
I
RRM
dV/dt V
(dI/dt)c (dV/dt)c = 15V/µs Tj=125°C MIN 2.0 2.5 A/ms
V
CL
V
=12V (DC)
OUT
R
=33Ω
L
V
=12V (DC)
OUT
R
=33Ω
L
V
OUT=VDRMRL
I
= 100mA gate open Tj=25°C MAX 20 35 mA
OUT
QI - QII - QIII Tj=25°C MAX 10 25 mA
QI - QII - QIII Tj=25°C MAX 1 1.1 V
=3.3kΩ Tj=125°C MIN 0.2 V
IG=2xIGtmax Tj=25°C MAX 40 60 mA
I
= 5.6A tp=380µs Tj=25°C MAX 1.5 V
OUT
Tj=125°C MAX 0.90 V
/
V
= 700V Tj=25°C MAX 10 µA
OUT
Tj=125°C MAX 500
=460V gate open Tj=110°C MIN 200 500 V/µs
OUT
ICL= 1mA tp=1ms Tj=25°C TYP 1100 V
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